砷化镓气相掺硫外延和亚微米薄层的制备

本文介绍了Ga-AsCl_3-H_2体系,研究了气相外延时硫的掺杂行为,讨论了硫的掺杂机理和生长了亚微米薄层。制得的亚微米外延层的质量表明,表面形貌良好,缺陷少,重复性好。典型的电学性质为:当厚度≤0.4μm和浓度为1—2×10~(17)/cm~3时,击穿电压V_B=7—10V。在单层和多层外延结构中,界面浓度基本是突变的,过渡区约0.1μm。这些外延片已用于制备变容管和远红外探测器等。     

THE SULFUR INCORPORATION AND THE GROWTH OF GaAs SUBMICROMETER EPILAYERS IN Ga-AsCl_3-H_2 SYSTEM

Submicrometer epilayers have been grown in Ga-AsCl_3-H_2 system using elemental sulfur as adopant.The mechanism of sulfur incorporation was discussed on the basis of surface adsorption.Ithas been shown that the electrical properties of single epilayers are typically n=1-2×10~(17)/cm~3,thick-ness 0.4 μm and breakdown voltage about 7—10V.The width of interface region in single andmultilayer structures is about 0.1μm.The epilayers obtained have been used to fabricate the microwave devices,such as Gunn diodes,varactors,and far infrared detectors.     

砷化镓低温气相外延的研究

本文研究了GaAs低温气相外延过程和评价了外延层的质量。对低温外延时的表面形貌,生长速率,剩余杂质浓度,电子迁移率,深能级杂质和纵向浓度分布进行了讨论,并与高温外延进行了比较。结果表明,低温外延是制备较高质量外延层的一种可取方法。