应用于光遗传学的集成式注入型生物光电极器件的研究进展

光遗传学是一门涉及神经科学、光学、半导体光电子学及生物医学的交叉科学.把光作为一种遗传学的研究工具,可为神经科学研究提供更高效、精准的神经调控手段,也为临床精神疾病的研究和治疗提供了新的思路.集成式注入型生物光电极是一种集刺激神经元的光源与采集生物电信号的微电极于一体的多功能生物微探针,在利用活体生物进行的光遗传学研究中有着重要的应用.文章回顾了光遗传学的历史,对集成式注入型生物光电极器件的分类和发展进行了分析,详细比较了不同类型光电极器件在结构和性能上的差异,从电学特性、噪声信号、生物兼容性及可靠性等方面进行评价.最后,对光电极器件的未来发展进行了初步的探讨.     

Abnormal phenomenon of source-drain current of AlGaN/GaN heterostructure device under UV/visible light irradiation

We report an abnormal phenomenon that the source-drain current (I_D) of AlGaN/GaN heterostructure devices decreases under visible light irradiation. When the incident light wavelength is 390 nm, the photon energy is less than the band gaps of GaN and AlGaN whereas it can causes an increase of I_D. Based on the UV light irradiation, a decrease of I_D can still be observed when turning on the visible light. We speculate that this abnormal phenomenon is related to the surface barrier height, the unionized donor-like surface states below the surface Fermi level and the ionized donor-like surface states above the surface Fermi level. For visible light, its photon energy is less than the surface barrier height of the AlGaN layer. The electrons bound in the donor-like surface states below the Fermi level are excited and trapped by the ionized donor-like surface states between the Fermi level and the conduction band of AlGaN. The electrons trapped in ionized donor-like surface states show a long relaxation time, and the newly ionized donor-like surface states below the surface Fermi level are filled with electrons from the two-dimensional electron gas (2DEG) channel at AlGaN/GaN interface, which causes the decrease of I_D. For the UV light, when its photon energy is larger than the surface barrier height of the AlGaN layer, electrons in the donor-like surface states below the Fermi level are excited to the conduction band and then drift into the 2DEG channel quickly, which cause the increase of I_D.     

Distribution of donor states on the surfaceof AlGaN/GaN heterostructures

The uniform distribution model of the surface donor states in AlGaN/GaN heterostructures has been widely used in the theoretical calculation. A common and a triple-channel AlGaN/GaN heterostructure Schottky barrier diodes have been fabricated to verify the models, but the calculation results show the uniform distribution model can not provide enough electrons to form three separate 2DEGs in the triple-channel AlGaN/GaN heterostructure. Our experiments indicate the uniform distribution model is not quite right, especially for the multiple-channel AlGaN/GaN heterostructures. Besides, it is found the exponential distribution model possibly matches the actual distribution of the surface donor states better, which allows the 2DEG to form in each channel structure during the calculation. The exponential distribution model would be helpful in the research field.