排序方式: 共有23条查询结果,搜索用时 31 毫秒
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Zinc oxide (ZnO) thin films were grown on n-GaN/sapphire substrates by radio-frequency (RF) magnetron sputtering. The films were grown at substrate temperatures ranging from 400 to 700 ℃ for 1 h at a RF power of 80 W in pure Ar gas ambient. The effect of the substrate temperature on the structural and optical properties of these films was investigated by X-ray diffraction (XRD), atomic force microscopy (AFM) and photoluminescence (PL) spectra. XRD results indicated that ZnO films exhibited wurtzite symmetry and c-axis orientation when grown epitaxially on n-GaN/sapphire. The best crystalline quality of the ZnO film is obtained at a growth temperature of 600 ℃. AFM results indicate that the growth mode and degree of epitaxy strongly depend on the substrate temperature. In PL measurement, the intensity of ultraviolet emission increased initially with the rise of the substrate temperature, and then decreased with the temperature. The highest UV intensity is obtained for the film grown at 600 ℃ with best crystallization. oindent 相似文献
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We have theoretically calculated the photovoltaic conversion efficiency of a monolithic dual-junction GaInP/GaInAs device,which can be experimentally fabricated on a binary GaAs substrate.By optimizing the bandgap combination of the considered structure,an improvement of conversion efficiency has been observed in comparison to the conventional GaInP_2/GaAs system.For the suggested bandgap combination 1.83 eV/1.335 eV,our calculation indicates that the attainable efficiency can be enhanced up to 40.45%(30... 相似文献
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GeSn (0.524 eV) single-junction thermophotovoltaic cells based on the device transport model 下载免费PDF全文
Xin-Miao Zhu 《中国物理 B》2022,31(5):58801-058801
Based on the transport equation of the semiconductor device model for 0.524 eV GeSn alloy and the experimental parameters of the material, the thermal-electricity conversion performance governed by a GeSn diode has been systematically studied in its normal and inverted structures. For the normal p+/n (n+/p) structure, it is demonstrated here that an optimal base doping Nd(a) = 3 (7)×1018 cm-3 is observed, and the superior p+/n structure can achieve a higher performance. To reduce material consumption, an economical active layer can comprise a 100 nm-300 nm emitter and a 3 μm-6 μm base to attain comparable performance to that for the optimal configuration. Our results offer many useful guidelines for the fabrication of economical GeSn thermophotovoltaic devices. 相似文献
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以表面改性的煤矸石粉、硝酸铋和碘化钾为原料,采用超声法制备了BiOI/煤矸石复合粉体和Bi5 O7I/Bi4O5I2/煤矸石复合粉体,利用XRD、SEM、EDS对所制得的样品进行了表征,并以模拟太阳光为光源,罗丹明B为目标降解物,对其光催化活性进行了研究.结果表明:BiOI/煤矸石复合粉体和Bi5O7I/Bi4O5I2/煤矸石复合粉体均表现出较高的可见光光催化降解能力,并且Bi5O7I/Bi4O5I2/煤矸石复合粉体的光催化活性要大于BiOI/煤矸石复合粉体的光催化活性.Bi5O7I/Bi4O5I2/煤矸石复合粉体三次循环利用后光催化2h对罗丹明B的降解率仍可达到88.9;,可重复使用. 相似文献
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滑动弧等离子体的电弧温度场、电场和导电区域尺寸是确定电子温度、电子密度、化学反应速率以及能量效率的重要参数.对气流量为1.43 L/min和6.42 L/min时50 Hz交流滑动弧放电的电参数进行了测量;用瞬态的电弧模型描述滑动弧的能量传递,并用近似的介质电导率和热扩散系数对模型进行简化,解决了由于电弧结构变化所导致的移动边界问题;模拟求得等离子体的电弧结构、电场强度和动态温度场等参数的演化.其中,电弧电场的模拟值与实验值基本符合,计算得到电弧轴心温度可以达到5700—6700 K.研究结果表明,气流直
关键词:
滑动弧等离子体
温度场
电场强度
导电半径 相似文献
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高效液相色谱-(紫外)氢化物发生原子荧光光谱法测定南极磷虾及其制品中6种砷形态 总被引:2,自引:0,他引:2
建立了南极磷虾及其制品中6种砷形态的高效液相色谱-(紫外)氢化物发生原子荧光光谱(HPLC-(UV) HG-AFS)分析方法,对流动相浓度及pH值、泵速和负高压等条件进行了优化。在最佳实验条件下,亚砷酸(As(Ⅲ))、砷酸(As(Ⅴ))、一甲基砷酸(MMA)、二甲基砷酸(DMA)、砷甜菜碱(AsB)和砷胆碱(AsC)在5~100μg/L范围内线性关系良好(r~20.999 0),检出限(LOD,S/N≥3)均为0.01 mg/kg,定量下限(LOQ,S/N≥10)均为0.03 mg/kg;在0.01、0.05、0.10 mg/kg加标水平下,回收率为89.2%~108%,相对标准偏差(RSD,n=6)为3.4%~14%。采用该方法测定了南极磷虾及其制品中6种砷形态,无机砷(AsⅢ和AsⅤ)含量均低于水产品及其制品中无机砷的国家限量标准。该方法操作简单,适用范围广,结果准确可靠,可用于南极磷虾及其制品中砷的形态分析。 相似文献
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水煤气变换反应是工业上用于提纯H2以及去除CO的重要化学反应。为克服水煤气变换反应低温下动力学的限制,本文建立一种低温等离子体协同铜基催化剂催化水煤气变换反应体系,使得反应能在120℃时进行。通过研究不同载体(Al2O3、CeO2、TiO2、SiO2、SAPO-34)负载铜催化剂对等离子体催化的影响后发现,当CuOx/CeO2催化剂同等离子体耦合时,表现出最佳的催化活性,CO转化率57%,氢气产率42%。研究表明,更好的催化性能归因于CuOx/CeO2催化剂表面的氧空位以及数量众多的Cu活性位点,有利于吸附反应物,促使反应的进行。但是载体的比表面积、颗粒尺寸、酸性位点数量,介电常数并不是影响本文实验条件下低温等离子体催化WGS反应的主要因素。 相似文献