X波段捷变频磁控管的研究

分析了捷变频磁控管在研制过程中关键零部件对磁控管性能的影响,并在设计方面给出了预防措施。     

螺旋线行波管的夹持技术研究

主要介绍了螺旋线行波管螺旋线的两种夹持方法:金属管壳三角变形夹持法和绑扎金属管壳热膨胀夹持法,并对两种方法的优缺点做了比较。     

高电容密度硅基MIS芯片电容北大核心CSCD

制备了一种3D结构的硅基金属-绝缘层-半导体(MIS)芯片电容,通过深孔结构增大了电容的有效电极面积,从而极大程度地提升了电容密度,在耐压70V下其电容密度高达20nF/mm2,是传统平面MIS电容的50倍,在-55~150℃内其温度系数小于1%。     

基于玻璃钝化结构的梁式引线肖特基T型对管芯片的研制

基于玻璃钝化结构的梁式引线集成器件机械强度高、寄生参数小,在高频检波、混频电路中有重要应用。通过梯度式腐蚀法获得了V型玻璃槽结构,采用低应力玻璃钝化工艺实现槽内覆盖填充,并结合低势垒蒸发技术实现了高一致性的玻璃钝化结构Si基梁式引线肖特基T型对管芯片的研制。研制的芯片正向压降V_F≤350 mV,结电容C_jo≤0.1 pF,击穿电压V_BR≥4 V,动态电阻R_D≤20Ω,电压灵敏度S_v≥17 mV/μW,对管芯片的关键电参数偏差小于5%。该技术途径可应用于梁式引线四管堆等多种集成结构形式,可有效促进电路组件的小型化发展。     

An improved design for Al Ga N solar-blind avalanche photodiodes with enhanced avalanche ionization

To enhance the avalanche ionization, we designed a new separate absorption and multiplication AlGaN solarblind avalanche photodiode(APD) by using a high/low-Al-content AlGaN heterostructure as the multiplication region instead of the conventional AlGaN homogeneous layer. The calculated results show that the designed APD with Al_(0.3)Ga_(0.7)N/Al_(0.45)Ga_(0.55)N heterostructure multiplication region exhibits a 60% higher gain than the conventional APD and a smaller avalanche breakdown voltage due to the use of the low-Al-content Al_(0.3)Ga_(0.7)N which has about a six times higher hole ionization coefficient than the high-Al-content Al_(0.45)Ga_(0.55)N. Meanwhile, the designed APD still remains a good solar-blind characteristic by introducing a quarter-wave AlGaN/AlN distributed Bragg reflectors structure at the bottom of the device.