基于SSTDR的线缆故障检测算法

针对目前线缆故障检测方法对定位结果准确性和可行性的影响,文中利用Matlab的Simulink仿真平台建立线缆故障模型,结合线缆特性建立系统模型,对扩散频谱时域反射方法进行了研究,采用直接序列扩频信号作为测试信号在线缆上传输,进行检测分析,并根据传输时间差等参数判断故障距离。对测试信号的不同调制方法进行仿真分析后,验证了该方法在线缆故障定位中的可行性,以及线缆故障测量中以BPSK和QPSK效果最佳。     

虚拟震源测深法及其在INDEPTH-3台阵中的应用

基于中美合作项目INDEPTH第3期在青藏高原布设的台站,使用虚拟震源测深法研究青藏高原中部的地壳厚度。结果显示,拉萨地体和羌塘地体的地壳结构存在巨大差异。拉萨地体的地壳厚度大约为57 km,与艾里均衡说预测的地壳厚度基本一致,说明拉萨地体的地壳结构比较简单。羌塘地体的地壳厚度为60~75 km,向北有增厚趋势,明显较艾里均衡说预测的地壳厚,说明羌塘地体地壳结构比较复杂,原因有可能是羌塘地体下存在高温流体和低速带,或者与印度板块岩石圈在班公湖-怒江缝合带以北向下俯冲有关。     

磷酰化氨基酸反应性质的理论研究

采用量子化学计算研究了磷酰化氨基酸的反应性质,包括N-磷酰氨基酸成肽反应、成酯反应、磷上酯交换反应和磷上的N→O迁移反应的机理以及计算模型和计算方法的选择,并从理论上解释了自然界选择α-氨基酸而不是β,γ-氨基酸的实验事实.     

基于71M6511芯片的电能表射频辐射抗扰度试验整改

为解决电能表射频辐射抗扰度试验难以通过的问题,在对一款基于71M6511芯片的单相多功能电子式电能表进行试验,诊断分析并整改成功的基础上,总结提出一些针对性的解决方案,对于拓展电能表企业生产和设计思路,提高电能表产品质量,增强电能表运行的可靠性,具有重要的现实意义。     

非故意掺杂GaN薄膜方块电阻与载气中N2比例关系研究

利用金属有机气相外延方法研究了非故意掺杂GaN薄膜的方块电阻与高温GaN体材料生长时载气中N₂比例的关系.研究发现,随着载气中N₂比例的增加,GaN薄膜方块电阻急剧增加.当载气中N₂比例为50%时,GaN薄膜方块电阻达1.1×10⁸Ω/□,且GaN表面平整,均方根粗糙度为0.233nm.二次离子质谱分析发现,载气中N₂比例不同的样品中碳、氧杂质含量无明显差别.随着载气中N₂比 关键词： 半绝缘GaN薄膜 载气 金属有机气相外延 位错     

基于X射线衍射的GaN薄膜厚度的精确测量

结合Williamson-Hall plot方法和线型分析方法的优点,提出了一种有效分离有限晶粒尺寸和非均匀应力等X射线衍射展宽效应的方法,可以用于GaN外延层厚度等参数的快速精确测量.用该方法对一系列在蓝宝石衬底上生长的厚度在0.7—4.2μm的GaN外延膜进行了测量,并与椭圆偏振光谱法测量结果进行了比较,结果表明其差别<4%,反应了这种方法的准确性. 关键词： GaN薄膜 厚度测量 X射线衍射     

Metal-to-metal antifuse with low programming voltage and low on-state resistance

This paper describes and analyses the impact of the Ti layer, which is embedded between the insulator and top electrode, on the programming characteristic of the Al-HfO₂-Al antifuse. The programming voltage of the antifuse with 120 Å HfO₂ is properly reduced from 5.5 to 4.6 V with an embedded Ti layer. Low on-state resistance (~19 Ω) and low programming voltage (4.6 V) is demonstrated in the embedded Ti antifuse with 120 Å HfO₂ while keeping sufficient off-state reliability. The antifuse embedded with a Ti layer between the insulator and top electrode has been developed and has potential in field programmable devices.     

日本公众理解科学实践的一个案例：关于“转基因农作物”的“共识会议”

随着公众理解科学理论的发展,在"缺失模型"显示出越来越多的问题之后,各国开始探索让公众参与决策与科学技术有关的公共性事务的方式,共识会议就是其中一种很具代表性的尝试.本文以日本2000年召开的第一次全国范围的共识会议作为案例,对其背景、主要内容、意义和存在的问题进行了简要的分析和讨论.这种研究从一个特定的方面使我们对于日本公众理解科学实践有所认识,并可带来有益的思考.     

Carrier transport in III–V quantum-dot structures for solar cells or photodetectors

According to the well-established light-to-electricity conversion theory,resonant excited carriers in the quantum dots will relax to the ground states and cannot escape from the quantum dots to form photocurrent,which have been observed in quantum dots without a p–n junction at an external bias.Here,we experimentally observed more than 88% of the resonantly excited photo carriers escaping from In As quantum dots embedded in a short-circuited p–n junction to form photocurrent.The phenomenon cannot be explained by thermionic emission,tunneling process,and intermediate-band theories.A new mechanism is suggested that the photo carriers escape directly from the quantum dots to form photocurrent rather than relax to the ground state of quantum dots induced by a p–n junction.The finding is important for understanding the low-dimensional semiconductor physics and applications in solar cells and photodiode detectors.     

GaN Films Grown on Si （111） Substrates Using a Composite Buffer with Low Temperature A1N Interlayer

A GaN interlayer between low temperature （LT） A1N and high temperature （PIT） A1N is introduced to combine HT AIN, LT A1N and composition-graded A1GaN as a novel buffer layer for GaN films grown on Si （111） substrates. The crystal quality, surface morphology and strain state of the GaN film with this new buffer are compared with those of GaN grown on a conventional buffer structure. By changing the thickness of LT A1N, the crystal quality is optimized and the crack-free GaN film is obtained. The in-plane strain in the GaN film can be changed from tensile to compressive strain with the increase in LT A1N thickness.