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The diffusion of Zn in InP at low temperature is investigated.The experiment is accomplishedin an evacuated and sealed quartz ampoule using Zn_3P_2 as the source of Zn.The electrical characteristics of the diffusion samples obtained by the isotemperature processand the two-temperature process have been compared.It is found that with the two-temperatureprocess one can obtain a smooth,damageless and high-concentration surface layer.This processhas been applied to fabricate InGaAsP/InP light emitting diodes,and the diodes obtained have anoutput power of≥1mW with a series resistance of 2—5Ω.The behaviors of Zn diffusion in InPare discussed. 相似文献
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本文用Zn3P2源在闭管条件下研究了Zn在InP中的低温(520700℃)扩散。比较了用等温扩散和双温区扩散技术扩散后,样品的电学参数。结果表明:双温区扩散法可得到表面光亮,无损伤的高浓度表面层。该法已用于InGaAsP/InP双异质结发光管的制备工艺中,并制得了光功率1mW,串联电阻23的发光管。还讨论了Zn在InP中扩散时的行为,解释了低温(550℃)扩散过程中,等温扩散时出现的异常现象。 相似文献
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在室温(15~35℃),大气气氛中研究了InGaAsP/InP双异质结发光二极管的退化特性。有二种慢退化类型,连续工作104小时后,InGaAsP/InP发光二极管的电学参数、光学参数(除原有暗结构的B型慢退化器件,老化初期光功率下降10~20%外)均无明显变化。用红外电视选行扫描仪观察了老化过程中发光区的EL图象。研究了该器件的退化特性与EL图象的变化规律,找出了它们的对应关系。用扩展缺陷模型解释了InGaAsP/InP双异质结发光管的退化机理。 相似文献
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本文报导在(100)晶向InP衬底上,液相外延生长(λ=1.0~1.31μm)GaInAsP/InP双异质结的研究结果。测定了600—670℃温度范围内InP在In中的饱和溶解度,研究了Te、Sn和Zn、Mg等掺杂剂的行为。用X光双晶衍射法研究了GaInAsP/InP异质结的晶格失配,用扫描电镜电子束感生电流法和电化学C-V法研究了外延片中p-n结偏位现象。用光吸收法测试外延片吸收边,估算了外延片中四元层的禁带宽度,并与制管后的发光波长作了比较。外延片可制得发光波长1.0~1.3μm、功率达1mw(100mA工作电流)的光通讯用小面积发光二极管。 相似文献
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<正> 一、引 言 石英光纤在1.0~1.7μm范围有低损耗和低色散,因此长波长光纤通信是近年来发展较快的领域.为了使长波长光通信系统实用化,研究可作为这一系统光源用的 InGaAsP/InP双异质结发光管光功率的温度和饱和特性,具有现实意义. 相似文献
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The effects of the growth conditions of two-phase solution liquid phase epitaxy(LPE)(i.e.growth temperature,cooling rates and solution composition)on lattice mismatch and band-gapwavelength in GaInAsP/InP heterojunction LPE layers have been investigated by X-ray double-crystal diffractometry and double-beam spectrophotometry.The stress in the grown interface freeof misfit dislocations and lattice mismatch at growth temperature have been calculated. 相似文献