Multiple-State Storage Capability of Stacked Chalcogenide Films （Si16Sb33Te51/Si4Sb45Te51/Si11Sb39Te50） for Phase Change Memory

The multiple-state storage capability of phase change memory （PCM） is confirmed by using stacked chalcogenide films as the storage medium. The current-voltage characteristics and the resistance-current characteristics of the PCM clearly indicate that four states can be stored in this stacked film structure. Qualitative analysis indicates that the multiple-state storage capability of this stacked film structure is due to successive crystallizations in different Si-Sb-Te layers triggered by different amplitude currents.     

Nitrogen and Silicon Co-Doping of Ge2Sb2Te5 Thin Films for Improving Phase Change Memory Performance

Electrical properties and phase structures of （Si＋N）-codoped Oe2Sb2Te5 （GST） for phase change memory are investigated to improve the memory performance. Compared to the films with N or Si dopants only in previous reports, the （Si＋N）-doped GST has a remarkable improvement of crystalline resistivity of about 104mΩcm. The Fourier-transform infrared spectroscopy spectrum reveals the Si-N bonds formation in the film. X-ray diffraction patterns show that the grain size is reduced due to the crystallization inhibition of the amorphous GST by SiNx, which results in higher crystalline resistivity. This is very useful to reduce writing current for phase change memory applications.     

PZT薄膜微图形的制作精度的研究

采用典型的半导体光刻工艺用ＢＨＦ／ＨＮＯ３溶液成功地刻蚀了ＰＺＴ（５２／４８）薄膜。研究了薄膜的微观结构对微图形的制作精度的影响。结果表明，在薄膜中晶粒团聚区域和周围区域的刻蚀速率存在着差异，晶粒小的薄膜有利于获得高保真的从掩膜到薄膜的图形转移，晶粒团聚区域的尺寸基本决定了图形转移的误差。     

Improvement of Electrical Properties of the Ge2Sb2Te5 Film by Doping Si for Phase-Change Random Access Memory

Si-doped Ge2Sb2Te5 films have been prepared by dc magnetron co-sputtering with Ge2Sb2Te5 and Si targets. The addition of Si in the Ge2Sb2Te5 film results in the increase of both crystallization temperature and phasetransition temperature from face-centred-cubic （fcc） phase to hexagonal （hex） phase. The resistivity of the Ge2Sb2Te5 film shows a significant increase with the Si doping. When doping 11.8 at.% of Si in the film, the resistivity after 460℃ annealing increases from 1 to 11 mΩ.cm and dynamic resistance increase from 64 to 99Ω compared to the undoped Ge2Sb2Te5 film. This is very helpful to writing current reduction of phase-change random access memory.     

铁电微型传感器和执行器制作技术

采用表面微细加工技术制作了铁电微型传感器和执行器。其技术特点是将铁电薄膜制备和加工工艺与半导体集成电路工艺相结合。其技术难点有：平面化、多晶硅的内应力控制，悬空结构与基片粘连及各层薄膜制备工艺间的兼容性等。本文提出了解决方法。     

CAN多主总线技术在电动汽车控制系统中的应用研究

通过引入CAN总线通讯协议、CAN通信结构的电子链路,以及CAN总线分布式控制技术,可针对电动汽车的动力总成结构建构起动力系统控制模型,对整车的电机负载、驱动力矩、加速力矩、制动回馈等能量变化作出控制。经过具体的仿真实验分析得出：利用CAN总线协议、动力总成控制器、电机控制器、电池管理系统等软硬件,开展智能电动汽车的道路测试控制,达到了电动汽车控制系统既定的动力控制目标。