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用经验赝势方法计算了体ZnSe以及ZnSe/GaAs单异质结系统中ZnSe外延层г、X、L等特殊对称点导带底能量随压力的变化。结果表明,同Si、Ge、GaAs等半导体材料不同,ZnSe的X点导带底具有正的压力系数,但比г点的压力系数小,这是ZnSe材料以及ZnSe基异质结构材料发生直接禁带向间接禁带的转变时所需转变压力较大的根本原因。研究了ZnSe/GaAs异质结构中晶格失配造成的应变对外延层г、X、L对称点压力系数的影响,表明这种晶格失配造成的应变可以极大地减小ZnSe外延层材料由直接禁带向间接禁带的转变压力。 相似文献
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采用改进的无规元素孤立位移模型和波恩-黄近似,运用电磁场的麦克斯韦方程和边界条件,研究极性三元混晶膜中的表面声子极化激元.以AlxGa1-xAs,ZnxCd1-xS 和GaxIn1-xN 膜为例,获得了其中表面声子极化激元的频率作为波矢和膜厚之函数的数值结果并进行了讨论.结果表明:在三元混晶膜中有四支表面声子极化激元,不同材料的色散曲线分别显示了混晶电磁声子模的"双模"和"单模"特征. 相似文献
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We study the energy levels of an electron (or hole) polaron in a parabolic quantum well structure,including the spatial dependence of the effective mass.We also consider the two-mode behaviour of longitudinal optical phonon modes of the ternary mixed crystals in the structure,in the calculation of the effect of the electron phonon interaction.We calculate the ground state,the first excited state and the transition energy of an electron (or hole) in the GaAs/AlxGa1-xAs parabolic quantum well structure.The numerical results show that the electron-phonon interaction obviously affects the energy levels of the electron (or hole),which are in agreement with experimental results. 相似文献
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On the binding energies of excitons in polar quantum well structures in a weak electric field
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The binding energies of excitons in quantum well structures subjected to an applied uniform electric field by taking into account the exciton longitudinal optical phonon interaction is calculated. The binding energies and corresponding Stark shifts for Ⅲ-Ⅴ and Ⅱ-Ⅵ compound semiconductor quantum well structures have been numerically computed. The results for GaAs/A1GaAs and ZnCdSe/ZnSe quantum wells are given and discussed. Theoretical results show that the exciton-phonon coupling reduces both the exciton binding energies and the Stark shifts by screening the Coulomb interaction. This effect is observable experimentally and cannot be neglected. 相似文献
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We study the effects of electron-phonon interaction on the electron ground state in a symmetric triangular quantum well, and calculate the ground state energy of an electron in the GaAs/Al0.96Ga0.04As triangular quantum well including the effects of the interaction between electrons and confined LO phonons by using a modified Lee-Low-Pines variational method. The electron wavefunction in the triangular well is chosen as the Airy function. The numerical results are given and discussed. 相似文献