低电阻GaN基太赫兹空气桥结构平面肖特基二极管

提出了通过增大欧姆接触电极包围角提高GaN基太赫兹肖特基二极管的截止频率的方法,该方法减小了空气桥结构平面肖特基二极管的串联电阻,进而提高了器件的截止频率.设计并制备了不同欧姆接触电极包围角的空气桥结构平面肖特基二极管,通过对器件Ⅰ-Ⅴ特性及C-V特性的测量,可知随着欧姆接触电极包围角的增大,肖特基二极管的串联电阻减小,而肖特基二极管的总电容并没有受影响.欧姆接触电极全包围结构的肖特基二极管截止频率为264 GHz,约为欧姆接触电极包围角为180°器件的1.6倍.     

Abnormal phenomenon of source-drain current of AlGaN/GaN heterostructure device under UV/visible light irradiation

We report an abnormal phenomenon that the source-drain current (I_D) of AlGaN/GaN heterostructure devices decreases under visible light irradiation. When the incident light wavelength is 390 nm, the photon energy is less than the band gaps of GaN and AlGaN whereas it can causes an increase of I_D. Based on the UV light irradiation, a decrease of I_D can still be observed when turning on the visible light. We speculate that this abnormal phenomenon is related to the surface barrier height, the unionized donor-like surface states below the surface Fermi level and the ionized donor-like surface states above the surface Fermi level. For visible light, its photon energy is less than the surface barrier height of the AlGaN layer. The electrons bound in the donor-like surface states below the Fermi level are excited and trapped by the ionized donor-like surface states between the Fermi level and the conduction band of AlGaN. The electrons trapped in ionized donor-like surface states show a long relaxation time, and the newly ionized donor-like surface states below the surface Fermi level are filled with electrons from the two-dimensional electron gas (2DEG) channel at AlGaN/GaN interface, which causes the decrease of I_D. For the UV light, when its photon energy is larger than the surface barrier height of the AlGaN layer, electrons in the donor-like surface states below the Fermi level are excited to the conduction band and then drift into the 2DEG channel quickly, which cause the increase of I_D.     

Distribution of donor states on the surfaceof AlGaN/GaN heterostructures

The uniform distribution model of the surface donor states in AlGaN/GaN heterostructures has been widely used in the theoretical calculation. A common and a triple-channel AlGaN/GaN heterostructure Schottky barrier diodes have been fabricated to verify the models, but the calculation results show the uniform distribution model can not provide enough electrons to form three separate 2DEGs in the triple-channel AlGaN/GaN heterostructure. Our experiments indicate the uniform distribution model is not quite right, especially for the multiple-channel AlGaN/GaN heterostructures. Besides, it is found the exponential distribution model possibly matches the actual distribution of the surface donor states better, which allows the 2DEG to form in each channel structure during the calculation. The exponential distribution model would be helpful in the research field.