潜规则的风雨飘摇——互联网行业创业商机调查

过去几个月里，《科技创业》陆续采访了酷6、空中、腾讯、篱笆等国内知名网站的创始人。他们是在金融风暴袭击下这个行业里为数不多的逆风飞扬的典型代表。然而．对于其他大部分的互联网创业企业来说．不管是过去的2008年，还是正经历着的2009年都是腥风血雨且充满变数的。     

MP3随身听采购宝典

MP3掀起了音乐界的一场伟大变革。音乐发烧友和MP3设备制造商们早已沉迷在这种数字音乐中，随着价格的下落，MP3的平民化时代悄然来临了。而大家也愈发明白，只有选择适合自己的产品，才会获得真正的快乐。我们建议性地提出了“三大原则八项注意”的MP3随身听购买方法，希望对消费者有实际的指导作用。原则一：价格对比在价格方面，有一句广告词最值得体味只买对的，不买贵的。”重要的是要适合自己，绝不能片面地钻进“贵即是好”或“便宜最合适”的牛角尖。原则二：功能适用特别是面对百花争艳的产品，难免不产生乱花渐欲迷人眼”，在…     

The degradation mechanism of an AlGaN/GaN high electron mobility transistor under step-stress

Step-stress experiments are performed in this paper to investigate the degradation mechanism of an AlGaN/GaN high electron mobility transistor(HEMT).It is found that the stress current shows a recoverable decrease during each voltage step and there is a critical voltage beyond which the stress current starts to increase sharply in our experiments.We postulate that defects may be randomly induced within the AlGaN barrier by the high electric field during each voltage step.But once the critical voltage is reached,the trap concentration will increase sharply due to the inverse piezoelectric effect.A leakage path may be introduced by excessive defect,and this may result in the permanent degradation of the AlGaN/GaN HEMT.     

GaN HEMT外延材料表征技术研究进展

氮化镓(GaN)作为第三代半导体材料的典型代表,具有高击穿电场强度和高热导率等优异的物理特性,是制作高频微波器件和大功率电力电子器件的理想材料.GaN外延材料的质量决定了高电子迁移率晶体管(HEMT)的性能,不同材料特征的表征需要不同的测量工具和技术,进而呈现器件性能的优劣.综述了GaN HEMT外延材料的表征技术,详细介绍了几种表征技术的应用场景和近年来国内外的相关研究进展,简要总结了外延材料表征技术的发展趋势,为GaN HEMT外延层的材料生长和性能优化提供了反馈和指导.     

走在“甜蜜”的创业路上

李巍今年刚三十出头,但已经有9年的创业经历了。9年间,李巍完成了从一名会计到一名蜂蜜产品经销商,再到一名蜂蜜品牌创造者的转变。李巍没有很多年轻创业者那种急功近利的浮躁心态,她创业的每一步都走得很稳,因为她的目标不是一夜暴富,而是打造一个百年品牌。     

Negative bias-induced threshold voltage instability and zener/interface trapping mechanism in GaN-based MIS-HEMTs

We investigate the instability of threshold voltage in D-mode MIS-HEMT with in-situ SiN as gate dielectric under different negative gate stresses.The complex non-monotonic evolution of threshold voltage under the negative stress and during the recovery process is induced by the combination effect of two mechanisms.The effect of trapping behavior of interface state at SiN/AlGaN interface and the effect of zener traps in AlGaN barrier layer on the threshold voltage instability are opposite to each other.The threshold voltage shifts negatively under the negative stress due to the detrapping of the electrons at SiN/AlGaN interface,and shifts positively due to zener trapping in AlGaN barrier layer.As the stress is removed,the threshold voltage shifts positively for the retrapping of interface states and negatively for the thermal detrapping in AlGaN.However,it is the trapping behavior in the AlGaN rather than the interface state that results in the change of transconductance in the D-mode MIS-HEMT.     

低抗凝肝素寡糖的制备、结构表征及免疫活性评价

以猪肠黏膜来源低抗凝肝素为原料,采用苄酯碱水解法制备了寡糖.通过聚丙烯酰胺凝胶电泳(PAGE)、高效凝胶渗透色谱(HPGPC)-多角激光光散射法(MALLs)联用、核磁共振波谱(NMR)和液相色谱-质谱(LC-MS)联用技术对所制备寡糖的分子量分布及化学结构进行了表征.以该寡糖对活化X因子(FXa)及人凝血酶(FⅡa)活性的抑制作用评价了其抗凝血活性,并通过测定其对RAW264.7巨噬细胞吞噬能力及NO释放量的影响评价其免疫活性.结果表明,所制备寡糖的聚合度分布于2~22之间,平均分子质量为5300,无明显的抗凝血活性,但具有显著的免疫增强活性.     

High linearity AlGaN/GaN HEMT with double-Vth coupling for millimeter-wave applications

We demonstrated an AlGaN/GaN high electron mobility transistor(HEMT)namely double-Vthcoupling HEMT(DVC-HEMT)fabricated by connecting different threshold voltage(Vth)values including the slant recess element and planar element in parallel along the gate width with N;O plasma treatment on the gate region.The comparative studies of DVC-HEMT and Fin-like HEMT fabricated on the same wafer show significantly improved linearity of transconductance(Gm)and radio frequency(RF)output signal characteristics in DVC-HEMT.The fabricated device shows the transconductance plateau larger than 7 V,which yields a flattened fT/fmax-gate bias dependence.At the operating frequency of 30 GHz,the peak power-added efficiency(PAE)of 41%accompanied by the power density(Pout)of 5.3 W/mm.Furthermore,the proposed architecture also features an exceptional linearity performance with 1-d B compression point(P1 d B)of 28 d Bm,whereas that of the Fin-like HEMT is 25.2 d Bm.The device demonstrated in this article has great potential to be a new paradigm for millimeter-wave application where high linearity is essential.     

水溶性酵母β-葡聚糖的制备及免疫活性评价

以废啤酒酵母(Saccharomyces cerevisiae)为原料, 通过稀酸与稀碱处理获得碱不溶性酵母β-葡聚糖(SCBG), 进而在低温强碱/脲水溶液中氧化降解得到水溶性酵母β-葡聚糖(SCBGs), 再经层析柱分离得到4个纯化组分(SCBGs-0-1, SCBGs-1-1, SCBGs-1-2和SCBGs-1-3). 利用高效液相色谱、 高效凝胶渗透色谱与十八角激光光散射联用技术、 核磁共振波谱及与刚果红结合实验等对4个纯化组分的单糖组成、 分子量及化学结构进行了分析, 并通过其对巨噬细胞RAW 264.7吞噬能力及NO和TNF-α释放量的影响评价其免疫活性. 研究结果表明, 各纯化组分均由单一的葡萄糖构成, 是一类以β-1,3-D-葡聚糖为主链且在主链C₆位羟基上具有分支的β-1,3/1,6-葡聚糖,其分子量依次为198000, 960000, 270000和18700, 除SCBGs-1-3外, 其余3个组分均具有超螺旋结构, 且4个组分均能显著增强RAW 264.7的免疫活性.     

The degradation mechanism of an AIGaN/GaN high electron mobility transistor under step-stress

Step-stress experiments are performed in this paper to investigate the degradation mechanism of an AIGaN/GaN high electron mobility transistor （HEMT）. It is found that the stress current shows a recoverable decrease during each voltage step and there is a critical voltage beyond which the stress current starts to increase sharply in our experiments. We postulate that defects may be randomly induced within the A1GaN barrier by the high electric field during each voltage step. But once the critical voltage is reached, the trap concentration will increase sharply due to the inverse piezoelectric effect. A leakage path may be introduced by excessive defect, and this may result in the permanent degradation of the A1GaN/GaN HEMT.