高速可插拔光互连模块中信号的完整性设计

给出了一款双向4路并行14Gb/s光收发器的物理设计。分析了链路上的信号完整性设计,考虑了各个物理结构中不连续点,如差分过孔、AC耦合电容、金丝绑线、可插拔I/O接口,对传输特性的影响。从理论上分析了S参数谐振现象,找出导致谐振的原因,给出了用于分析此类问题的理论公式。通过对多种不连续结构进行电磁仿真和结果对比,提出具体的性能改进方案。通过整个链路的阻抗控制,插入损耗在10~15GHz内提高了1dB,S参数的谐振得到明显改善。最后,从时域的TDR和眼图测试角度对优化结构进行了验证。     

以小灵通发展历程为鉴,析广电5G发展之路

本文分析了小灵通发展历程,我国居民对通信价格敏感,广电5G具有很强的竞争力。结合广电自身的资源和5G能力,建议广电加大5G网络建设,低价取得用户;以家庭为入口,打造广电生态圈;以5G网络切片为路径,开展广泛运营合作。     

GC—MS分析不同方法提取的大黄挥发性成分

分别采用顶空进样法和超临界CO2萃取法提取大黄挥发性成分,采用GC-MS结合保留指数进行检测分析。顶空进样法分析鉴定出8种挥发性成分,超临界CO2萃取法鉴定出15种挥发性成分。两种提取方法分别侧重于不同类型的挥发性成分,利用GC-MS结合保留指数进行定性分析,更快速准确。     

A method of generating random bits by using electronic bipolar memristor

The intrinsic stochasticity of resistance switching process is one of the holdblocks for using memristor as a fundamental element in the next-generation nonvolatile memory.However,such a weakness can be used as an asset for generating the random bits,which is valuable in a hardware security system.In this work,a forming-free electronic bipolar Pt/Ti/Ta2O5/Pt memristor is successfully fabricated to investigate the merits of generating random bits in such a device.The resistance switching mechanism of the fabricated device is ascribed to the electric field conducted electrons trapping/de-trapping in the deep-energy-level traps produced by theoxygen grabbingprocess.The stochasticity of the electrons trapping/detrapping governs the random distribution of the set/reset switching voltages of the device,making a single memristor act as a random bit in which the resistance of the device represents information and the applied voltage pulse serves as the triggering signal.The physical implementation of such a random process provides a method of generating the random bits based on memristors in hardware security applications.