过渡金属卤化物改性非碳基吸附剂脱汞研究

以6种大比表面积非碳基成分为载体,经过渡金属卤化物改性处理后制成汞吸附剂,并对其不同烟气气氛和温度下的汞吸附性能及汞氧化率进行了研究。CuCl_2改性氧化铝在各种烟气条件下均表现出较好的汞吸附性能。FeCl_3改性沸石的汞脱除率相对略低,但它制作成本较低。这两种非碳基吸附剂在未来有较好的应用前景。改性吸附剂的最适宜反应温度100～200℃。     

与中国伙伴同进步共创语音市场新天地——访Konftel的全球销售总裁海珀·泰来先生

如今，随着视频会议应用技术日益发展，更多的用户开始寻找更佳的应用效果体验。因为一场会议的音频效果是决定整场会议的成败关键。那么，究竟什么样的设备能解决用户日益精细化的需求7什么样的解决方案又能够让一场电话会议进行得顺利而精彩？     

提升广播文艺类节目收听率的有效途径

广播文艺类节目是广播电视台节目的重要组成部分,以广播电台为传播媒介,用广播元素来传播多元化的文化娱乐信息.本文分析了广播文艺节目的历史责任,阐述了如何定位收听群众,并对创办一流广播文艺节目的具体途径进行了研究,以期对广播电台的收听率提升有所帮助.     

专访捷扬光电：领先始于产品服务决定成败

伴随多媒体通信技术的发展,视频通信逐渐为大众所熟知。而受益于三网融合的积极推进以及云计算的大力普及．也使得视频业务成为通信领域的核心业务．并且得以快速扩张。     

类金刚石薄膜力学特性的分子动力学模拟

基于Brenner的REBO势函数,利用分子动力学方法模拟了含氢量不同的类金刚石薄膜的纳米压痕过程,依据得到的加载卸载曲线,计算了薄膜的刚度、硬度以及弹性模量.结果表明:类金刚石薄膜的硬度由氢含量和sp³键含量两个因素共同决定;当薄膜中氢含量小于39% 时,薄膜硬度主要取决于sp³键含量,sp³键越多,硬度越高;当薄膜中氢含量达到52%,薄膜硬度则显著下降,此时氢的作用占据主导地位. 关键词： 类金刚石薄膜 分子动力学模拟 纳米压痕 硬度     

Molecular Dynamic Simulation on Graphitization and Dehydrogenization of Hydrogenated Carbon Films in Vacuum

The thermal stability of hydrogenated carbon films with H fraction from zero to 51.5% is studied by carrying out a molecular dynamical simulation on the annealing process in vacuum. Our simulations show that both graphitization temperature and dehydrogenization temperature decrease with H fraction in the films, which is in good agreement with the available experimental data. The dehydrogenization temperature is found to be much higher than the graphitization temperature. It is indicated that graphitization is the dominant process causing the degeneration of hydrogenated carbon films.     

Molecular Dynamical Simulations on a-C：H Film Growth from C and H Atomic Flux： Effect of Incident Energy

Molecular dynamical simulation is carried out to investigate the effects of the incident energy on a-C：H film growth from C and tt atomic flux. Our simulations show that the film growth at low incident energy （1 eV） is dominated by the adsorption of H and C atoms. At moderate incident energy （10 and 20eV）, the abstraction reaction of incident H atoms with H atoms adsorbed at the surface becomes important. At high incident energy （30 and 40eV）, the a-C：H film growth is a two-step process： one is the adsorption and the shallow implantation of C atoms, and the other is the deep implantation of H atoms.