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We used the time-resolved equipment consisting of a streak camera and normal photoluminescence set-up to measure the transcient behavior of the PL from the InGaAs/GaAs single quantum well sample, and thus obtained both the temporal resolution and the spectral resolution of the photoluminescence. A rapid decay of PL signal from the GaAs layer and the slow PL decay from the InGaAs well have beed found. From the experimetal results, the trapping efficiency of the carriers by the well is estimated to be about 80%. 相似文献
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本文测量了室温下硅甲烷(SiH_4)低分辨率和较高分辨率CARS光谱。低分辨率SiH_4的CARS谱与M.Hanabusa、H.Kikuchi等人的结果相同,但我们对光谱提出了新的分析;高分辨率SiH_4的CARS谱及其理论计算证实了我们所作的分析;并得出了SiH_4v_1带和v_3带Q 相似文献
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