排序方式: 共有8条查询结果,搜索用时 453 毫秒
1
1.
2.
3.
报道了封装大芯片InGaN/GaN蓝光发光二极管(LED)的实验结果.在室温下,正向电压为3.3V和电流为350mA时,其轴向亮度为16×104cd/m2,可视角为98°. 相似文献
4.
5.
6.
7.
In this paper, the GaN based epitaxial wafer is fabricated on big 1 mmx1 mm chips, and packaged with a special technology. At working current 350 mA and working voltage 3.74 V, the full viewing angle, the axial brightness and the output integral power of the 465 nm LED can reach 125? 210, 000 cd/m2 and 1.5 1m, respectively. The LED with such good performances has promising application potential in the fields of display, traffic and the development of solid-state white light source. 相似文献
8.
1