温度对GaSb/GaAs量子点尺寸分布的影响

采用低压金属有机物化学气相沉积 (LP-MOCVD) 法制备GaSb/GaAs量子点。通过对不同生长温度的样品进行分析发现温度的变化对GaSb/GaAs量子点的相位角无明显影响,量子点的形状是透镜型。由于量子点特殊的应力分布,可实现量子点的"自限制"生长。量子点的化学势不连续性以及Ostwald熟化机制的影响使得量子点尺寸分布在一定范围内不连续,会出现两种尺寸模式的量子点生长。Sb原子的表面迁移率对GaSb/GaAs量子点生长有较大的影响。升高温度可有效改善量子点的分立性,在升温过程中量子点体现出其熟化过程,高温时表面原子的解析附作用对量子点尺寸和密度的影响较大。     

初封载荷下封隔器胶筒表面自由变形特性分析

研究了封隔器胶筒在自由变形阶段受初封载荷作用下内、外表面发生位移变形的特性.依据连续介质力学理论，建立自由变形阶段的有限变形数学模型，给出了胶筒在初封轴向载荷下内、外表面径向变形的过程，得到胶筒非线性变形解析解.通过数值计算，在求解出胶筒外表面自由变形解析式的基础上，进一步分析了容易被忽略的胶筒内表面非线性变形规律和相关参数变化对其密封性能的影响.该变形特性分析可适用于不同型号的封隔器胶筒，为胶筒的密封和可靠性设计提供重要理论依据.     

喷涂功率对稀土元素掺杂氧化锆涂层微波介电性能的影响

以Yb₂O₃、Gd₂O₃、Y₂O₃和ZrO₂为原材料,采用固相反应法合成了锆酸钆钇镱(YGYZ)陶瓷粉末,采用等离子喷涂技术在不同喷涂功率下制备了YGYZ涂层。系统研究了喷涂功率变化对涂层微观结构、物相组成、孔隙率、介电常数以及力学性能的影响。结果表明,随着喷涂功率的升高,涂层内部会产生应力,涂层的密度和介电常数随之升高,而涂层的孔隙率、介电损耗和显微硬度则随之降低。喷涂功率为65kW时,涂层微波介电常数最小,其值为13.31,对应的介电损耗为3.8×10^-2。采用镱、钆和钇稀土元素掺杂的氧化锆涂层具有较低的介电常数和较高的热稳定性,在航空发动机领域具有应用前景。     

The design and numerical analysis of tandem thermophotovoltaic cells

In this paper, numerical analysis of GaSb （Eg = 0.72 eV）/Gao.84Ino.16Aso.14Sbo.86 （Eg = 0.53 eV） tandem thermopho- tovoltaic （TPV） cells is carried out by using Silvaco/Atlas software. In the tandem cells, a GaSb p-n homojunction is used for the top cell and a GalnAsSb p-n homojunction for the bottom cell. A heavily doped GaSb tunnel junction connects the two sub-cells together. The simulations are carried out at a radiator temperature of 2000 K and a cell temperature of 300 K. The radiation photons are injected from the top of the tandem cells. Key properties of the single- and dual-junction TPV cells, including I-V characteristic, maximum output power （Pmax）, open-circuit voltage （Voc）, short-circuit current （/~sc）, etc. are presented. The effects of the sub-cell thickness and carrier concentration on the key properties of tandem cells are investigated. A comparison of the dual-TPV cells with GaSb and GalnAsSb single junction cells shows that the Pmax of tandem cells is almost twice as great as that of the single-junction cells.     

Microstructure and lateral conductivity control of hydrogenated nanocrystalline silicon oxide and its application in a-Si:H/a-SiGe:H tandem solar cells

Phosphorous-doped hydrogenated nanocrystalline silicon oxide(n-nc-SiO_x:H) films are prepared via radio frequency plasma enhanced chemical vapor deposition(RF-PECVD). Increasing deposition power during n-nc-SiO_x:H film growth process can enhance the formation of nanocrystalline and obtain a uniform microstructure of n-nc-SiO_x:H film. In addition,in 20 s interval before increasing the deposition power, high density small grains are formed in amorphous SiO_x matrix with higher crystalline volume fraction(I_c) and have a lower lateral conductivity. This uniform microstructure indicates that the higher Ic can leads to better vertical conductivity, lower refractive index, wider optical band-gap. It improves the back reflection in a-Si:H/a-SiGe:H tandem solar cells acting as an n-nc-SiO_x:H back reflector prepared by the gradient power during deposition. Compared with the sample with SiO_x back reflector, with a constant power used in deposition process,the sample with gradient power SiO_x back reflector can enhance the total short-circuit current density(Jsc) and the initial efficiency of a-Si:H/a-SiGe:H tandem solar cells by 8.3% and 15.5%, respectively.     

超薄高速率单结微晶硅薄膜电池及其叠层电池

采用甚高频等离子体增强化学气相沉积技术, 基于优化表面形貌及光电特性的溅射后腐蚀ZnO:Al衬底, 将通过调控工艺参数获得的器件质量级高速微晶硅(μupc-Si:H )材料(沉积速率达10.57 Å/s)应用到微晶硅单结电池中, 获得了初始效率达7.49%的高速率超薄微晶硅单结太阳电池(本征层厚度为1.1 μm). 并提出插入n型微晶硅和p型微晶硅的隧穿复合结, 实现了非晶硅顶电池和微晶硅底电池之间的低损电连接, 由此获得了初始效率高达12.03% (V_oc=1.48 eV, J_sc=11.67 mA/cm², FF=69.59%)的非晶硅/微晶硅超薄双结叠层电池(总厚度为1.48 μm), 为实现低成本生产太阳电池奠定了基础.