多层栅介质层有机薄膜晶体管的存储与光响应特性

在真空室内一次性制备了具有多层栅介质层结构的有机薄膜晶体管(OTFTs).结果表明,制备的OTFTs具有电控开关、存储和光敏多重功能特性.分析认为,存储特性归功于器件的结构,采用了分离的CaF2纳米粒子岛作为电荷俘获中心.在光照环境下,观察到了两种不同类型的光响应特性.快速的光响应来自于有源层吸收了能量大于带隙的光子所...     

半导体激光起爆试验研究

采用BNCP掺杂炭黑作为激光起爆器的点火药剂,研制了具有点火时间检测功能的激光起爆试验装置,工作波长980nm,光功率0-2W可调,脉冲宽度1-200ms可调。利用该装置开展了系列激光点火试验,结果表明：该起爆药剂的发火阈值功率为240mW,最小全发火功率为400mW,最大不发火功率为80mW;点火功率大于最小全发火功率时的典型点火时间为600μs。     

大功率垂直腔面发射激光器的相干性测量与分析

通过有机化学气象沉积(MOCVD)技术在n型GaAs衬底上生长制作了发射波长为850nm的VCSELs4×4列阵器件,介绍了VCSELs的制作工艺流程.对器件进行了相干性测量,计算了干涉条纹可见度,分析了影响干涉条纹可见度的因素.     

阵列激光器的结特征参量及其可靠性研究

采用电导数方法提取了半导体激光器阵列的结特征参量m,并对阵列结特征参量m与器件可靠性的关系进行了理论与实验研究,结果表明:m值可以作为阵列可靠性检测的一个重要判据,同一批次的阵列器件中,m值大的器件属于低可靠性器件;阵列m值大则说明单元m值大,或阵列存在严重电流泄漏通道,或阵列单元一致性差等。     

Tapered Bragg reflection waveguide edge emitting lasers with near circular twin-beam emission

An edge emitting laser with two symmetrical near-circular spots located far field （FF） is demonstrated using tapered double-sided Bragg reflection waveguides （BRWs）. The BRWs consist of six pairs of top p-type and bottom n-type A10.Ga0.9 As/A10.3 Ga0.7As Bragg reflectors with a period thickness of 850 nm. The device has a 4° tapered angle configuration and exhibits two stable circular beams with a separation angle of 52°. Typical FF angles of 5.87° and 7.8° in the lateral and vertical directions, respectively, are achieved. The lateral FF angle in the ridged section is independent of the injection current （〉0.8 A） beeause of narrow ridge （-10 μm） confinement. By contrast, the FF angle in the tapered section shows an increase rate of 1.2 1.66°/A. The periodic modulation of the lasing wavelength is observed to be sensitive to self-heating effects.     

高功率半导体激光器的m值与器件质量的相关性

用电导数技术测量了高功率半导体激光器及阵列激光器的m值,讨论了影响m值大小的因素及与器件质量的相关性.结果表明,m值是器件质量和可靠性的重要标志之一,对于同种器件,质量好的器件的m值一定在某范围之内.对取值范围进行了讨论.     

Dependence of Junction Voltage Saturation on Uniformity and Quality of Laser Diode Bars

The dependence of the sinkage at the threshold of the electric derivative curve （IdV/dI-I） on the uniformity and the quality of the laser diode bar is analyzed. By using the equations derived from the equivalent circuits of the bars, the influence of the bar uniformity on the depth of the dip is investigated in theory under certain conditions. Furthermore, the experimental results based on the presented technique indicate that the depth of the dip is interrelated to the uniformity and the quality of the corresponding bar. The present technique can be used conveniently and effectively to measure the laser diode bars in practice.