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The magnetic skyrmion transport driven by pure voltage-induced strain gradient is proposed and studied via micromagnetic simulation. Through combining the skyrmion with multiferroic heterojunction, a voltage-induced uniaxial strain gradient is adjusted to move skyrmions. In the system, a pair of short-circuited trapezoidal top electrodes can generate the symmetric strain. Due to the symmetry of strain, the magnetic skyrmion can be driven with a linear motion in the middle of the nanostrip without deviation. We calculate the strain distribution generated by the trapezoidal top electrodes pair, and further investigate the influence of the strain intensity as well as the strain gradient on the skyrmion velocity. Our findings provide a stable and low-energy regulation method for skyrmion transport. 相似文献
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利用MPEG-2标准压缩的动态图象具有高清晰度和高质量的视听效果,有着广泛的应用前景。本文描述了利用C-Cube的CL9100/CL9110芯片组构成的MPEG-2解码系统,内容包括芯片功能介绍,解码系统结构及工作原理。 相似文献
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基于密度泛函理论的爬坡弹性带方法,对金红石相二氧化钛晶体中钛间隙、钛空位、氧间隙、氧空位4种本征缺陷的扩散特征进行了研究.对比4种本征缺陷在晶格内部沿不同扩散路径的过渡态势垒后发现,缺陷扩散过程呈现出明显的各向异性.其中,钛间隙和氧间隙沿[001]方向具有最小的扩散势垒路径,激活能分别为0.505 eV和0.859 eV;氧空位和钛空位的势垒最小的扩散路径分别沿[110]方向和[111]方向,激活能分别为0.735 eV和2.375 eV. 相似文献
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A generalized model of TiO_x-based memristive devices and its application for image processing
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Memristive technology has been widely explored, due to its distinctive properties, such as nonvolatility, high density,versatility, and CMOS compatibility. For memristive devices, a general compact model is highly favorable for the realization of its circuits and applications. In this paper, we propose a novel memristive model of TiO_x-based devices, which considers the negative differential resistance(NDR) behavior. This model is physics-oriented and passes Linn's criteria. It not only exhibits sufficient accuracy(IV characteristics within 1.5% RMS), lower latency(below half the VTEAM model),and preferable generality compared to previous models, but also yields more precise predictions of long-term potentiation/depression(LTP/LTD). Finally, novel methods based on memristive models are proposed for gray sketching and edge detection applications. These methods avoid complex nonlinear functions required by their original counterparts. When the proposed model is utilized in these methods, they achieve increased contrast ratio and accuracy(for gray sketching and edge detection, respectively) compared to the Simmons model. Our results suggest a memristor-based network is a promising candidate to tackle the existing inefficiencies in traditional image processing methods. 相似文献
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本文提出并探讨了一种管理磁盘存储空间的新方法-区间管理法(IMM)。这种方法把磁盘存储空间视为若干连续块区间的集合,将物理上连续的空间分配给每个写请求,这为高速存取提供了支持。文中给出了IMM的分配和回收算法流程,并作了可行性模拟。模拟结果表明,IMM是一种有效的盘空间管理方法。 相似文献
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目前,存储技术在通信领域得到了广泛应用,现代通信技术也对存储技术提出了更高和更新的要求,其中大型通信基站对网络存储提出了高可靠、高传输率的要求,而手持式设备对存储单元的小体积、低功耗提出了要求。在不久的将来,半导体存储、磁盘存储和光盘存储将会达到其存储极限,它们不可能做得更小或更快速,因为物理上不能把数据包装的 相似文献
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利用微芯片制备技术制备了带有电极的原位电学薄膜芯片,并结合自制的原位透射电镜样品台,实现了低温下透射电子显微镜聚焦电子束对InAs纳米线的精细刻蚀以及不同温度下的原位电学性能测量.研究发现,随着刻蚀区域截面积的减小,纳米线的电导率也随之减小.当纳米线的截面积从大于10000 nm2刻蚀至约800 nm2时,纳米线电导的减小速率与截面积的减小具有线性关系.同时利用低温聚焦电子束刻蚀,在InAs纳米线上原位制备了一个10 nm的纳米点,并在77与300 K下对该纳米点进行了电学性能测量.通过测量发现在77 K时出现库仑阻塞效应,发生了电子隧穿现象;而300 K时,热扰动提供的能量使这种现象消失. 相似文献
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热氧化法制备的ZnO薄膜的光致发光特性研究 总被引:1,自引:0,他引:1
在空气中利用热氧化方法分别在P型硅、高阻硅、陶瓷以及N型硅衬底上制备了氧化锌(ZnO)薄膜.同时在氧气中、P型硅衬底上氧化制备少量氧化锌薄膜加以比较.氧化时间固定为1 h,氧化温度300℃~800℃.采用X射线衍射(XRD)以及光致发光(PL)光谱研究比较薄膜的结构和PL特性.发现在氧气中氧化样品质量明显好于在空气中氧化的样品.氧气中300℃氧化时有最窄的半高宽和最大的晶粒尺寸.在高阻硅材料衬底上制备的ZnO薄膜表现出较好的紫外发射带,而在陶瓷材料上表现出较好的绿色发射带.而N型材料也是较好的紫外发射材料,P型材料在低温下表现出较好的发光特性. 相似文献