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Plasma-assisted surface treatment for low-temperature annealed ohmic contact on AlGaN/GaN heterostructure field-effect transistors 下载免费PDF全文
In this study, a low-temperature annealed ohmic contact process was proposed on Al Ga N/Ga N heterostructure field effect transistors(HFETs) with the assistance of inductively coupled plasma(ICP) surface treatment. The effect of ICP treatment process on the 2DEG channel as well as the formation mechanism of the low annealing temperature ohmic contact was investigated. An appropriate residual Al Ga N thickness and a plasma-induced damage are considered to contribute to the low-temperature annealed ohmic contact. By using a single Al layer to replace the conventional Ti/Al stacks, ohmic contact with a contact resistance of 0.35 ?·mm was obtained when annealed at 575?C for 3 min. Good ohmic contact was also obtained by annealing at 500?C for 20 min. 相似文献
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对InAs沟道InAlAs-InAs高电子迁移率晶体管材料及器件的设计和器件制作工艺进行了研究,器件样品性能良好,1μm栅长InAlAs-InAs HEMT器件的最大跨导300K时达到250mS/mm。这是国内首次研制成功的InAs沟道HEMT器件。 相似文献
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超低功耗GaAs PHEMT跨阻前置放大器 总被引:1,自引:0,他引:1
本文报导了光纤通信接收机中GaAs PHEMT工艺前置放大器的设计方法与测试结果。此前置放大器采用单电源供电,由1级放大、2级源级跟随器和1个反馈电阻组成。当前置放大器工作在2.5Gbit/s时,跨阻可达60dB Ω。采用 5V电源供电,功耗为110mW。 相似文献
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Hybrid-anode structure designed for a high-performance quasi-vertical GaN Schottky barrier diode 下载免费PDF全文
Qiliang Wang 《中国物理 B》2022,31(5):57702-057702
A quasi-vertical GaN Schottky barrier diode with a hybrid anode structure is proposed to trade off the on-resistance and the breakdown voltage. By inserting a SiN dielectric between the anode metal with a relatively small length, it suppresses the electric field crowding effect without presenting an obvious effect on the forward characteristics. The enhanced breakdown voltage is ascribed to the charge-coupling effect between the insulation dielectric layer and GaN. On the other hand, the current density is decreased beneath the dielectric layer with the increasing length of the SiN, resulting in a high on-resistance. Furthermore, the introduction of the field plate on the side wall forms an metal-oxide-semiconductor (MOS) channel and decreases the series resistance, but also shows an obvious electric field crowding effect at the bottom of the mesa due to the quasi-vertical structure. 相似文献
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Evaluation of a gate-first process for AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with low ohmic annealing temperature 下载免费PDF全文
In this paper, TiN/AlO_x gated Al Ga N/Ga N metal–oxide–semiconductor heterostructure field-effect transistors(MOSHFETs) were fabricated for gate-first process evaluation. By employing a low temperature ohmic process, ohmic contact can be obtained by annealing at 600℃ with the contact resistance approximately 1.6 ?·mm. The ohmic annealing process also acts as a post-deposition annealing on the oxide film, resulting in good device performance. Those results demonstrated that the TiN/AlO_x gated MOS-HFETs with low temperature ohmic process can be applied for self-aligned gate Al Ga N/Ga N MOS-HFETs. 相似文献
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Self-aligned-gate AlGaN/GaN heterostructure field-effect transistor with titanium nitride gate 下载免费PDF全文
Self-aligned-gate heterostructure field-effect transistor(HFET) is fabricated using a wet-etching method.Titanium nitride(TiN) is one kind of thermal stable material which can be used as the gate electrode.A Ti/Au cap layer is fixed on the gate and acts as an etching mask.Then the T-shaped gate is automatically formed through over-etching the TiN layer in 30% H_2O_2 solution at 95 ℃.After treating the ohmic region with an inductively coupled plasma(ICP) method,an Al layer is sputtered as an ohmic electrode.The ohmic contact resistance is approximately 0.3 Ω·mm after annealing at a low-temperature of 575 ℃ in N_2 ambient for 1 min.The TiN gate leakage current is only 10~(-8) A after the low-temperature ohmic process.The access region length of the self-aligned-gate(SAG) HFET was reduced from 2 μm to 0.3 μm compared with that of the gate-first HFET.The output current density and transconductance of the device which has the same gate length and width are also increased. 相似文献
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Design of vertical diamond Schottky barrier diode with junction terminal extension structure by using the n-Ga2O3/p-diamond heterojunction 下载免费PDF全文
A novel junction terminal extension structure is proposed for vertical diamond Schottky barrier diodes (SBDs) by using an n-Ga2O3/p-diamond heterojunction. The depletion region of the heterojunction suppresses part of the forward current conduction path, which slightly increases the on-resistance. On the other hand, the reverse breakdown voltage is enhanced obviously because of attenuated electric field crowding. By optimizing the doping concentration, length, and depth of n-Ga2O3, the trade-off between on-resistance and breakdown voltage with a high Baliga figure of merit (FOM) value is realized through Silvaco technology computer-aided design simulation. In addition, the effect of the work functions of the Schottky electrodes is evaluated. The results are beneficial to realizing a high-performance vertical diamond SBD. 相似文献