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LVDS的工作原理与应用 总被引:2,自引:0,他引:2
本文介绍了低电压差分信号LVDS的基本工作原理,以及在接口电路中的应用,并对其PCB板的设计作了必要的说明。 相似文献
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本文介绍了数字电视ATSC标准中的传输技术8VSB的基本原理和实现方法,并对其中一些关键问题做了探讨。 相似文献
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SIMON系列算法自提出以来便受到了广泛关注。积分分析方面,Wang,Fu和Chu等人给出了SIMON32和SIMON48算法的积分分析,该文在已有的分析结果上,进一步考虑了更长分组的SIMON64算法的积分分析。基于Xiang等人找到的18轮积分区分器,该文先利用中间相遇技术和部分和技术给出了25轮SIMON64/128算法的积分分析,接着利用等价密钥技术进一步降低了攻击过程中需要猜测的密钥量,并给出了26轮SIMON64/128算法的积分分析。通过进一步的分析,该文发现高版本的SIMON算法具有更好抵抗积分分析的能力。 相似文献
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利用聚焦离子束刻蚀技术在拓扑绝缘体Bi_2Se_3薄膜中刻蚀了纳米尺度的反点(antidot)阵列,并对制作的三个器件进行了系统的电学输运测量研究.低温下,所有器件中都观察到明显的弱反局域化效应.通过对弱反局域化效应的分析,发现器件一(Dev-1,不含有antidot阵列)和器件二(Dev-2,含有周期较大的antidot阵列)是始终由一个导电通道主导的量子输运系统,但在器件三(Dev-3,含有周期较小的antidot阵列)中能明确观察到较低温度下存在两个独立的导电通道,而在较高温度下Dev-3表现为由一个导电通道主导的量子输运系统. 相似文献
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Quantum oscillations in a hexagonal boron nitride-supported single crystalline InSb nanosheet
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A gated Hall-bar device is made from an epitaxially grown, free-standing InSb nanosheet on a hexagonal boron nitride (hBN) dielectric/graphite gate structure and the electron transport properties in the InSb nanosheet are studied by gate-transfer characteristic and magnetotransport measurements at low temperatures. The measurements show that the carriers in the InSb nanosheet are of electrons and the carrier density in the nanosheet can be highly efficiently tuned by the graphite gate. The mobility of the electrons in the InSb nanosheet is extracted from low-field magneotransport measurements and a value of the mobility exceeding $\sim 1.8\times10^4$ cm$^{2}\cdot$V$^{-1}\cdot$s$^{-1}$ is found. High-field magentotransport measurements show well-defined Shubnikov-de Haas (SdH) oscillations in the longitudinal resistance of the InSb nanosheet. Temperature-dependent measurements of the SdH oscillations are carried out and key transport parameters, including the electron effective mass $m^{\ast }\sim 0.028 m_{0}$ and the quantum lifetime $\tau \sim 0.046 $ ps, in the InSb nanosheet are extracted. It is for the first time that such experimental measurements have been reported for a free-standing InSb nanosheet and the results obtained indicate that InSb nanosheet/hBN/graphite gate structures can be used to develop advanced quantum devices for novel physics studies and for quantum technology applications. 相似文献
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