静电放电对GaN基功率型LED老化特性的影响

对GaN基蓝光功率型LED在老化前和老化期间施加反向人体模式静电放电(ESD),并对静电打击前后及老化前后的LED光学电学参数进行分析。实验结果及理论分析表明,ESD使LED芯片有源层及限制层中产生缺陷,最终导致电学特性及光学特性的变化。ESD给LED带来的损伤可在老化前期过程中被局部恢复,但随着老化时间推移,电参数漂移程度及光衰幅度不断增大,而老化过程中LED对ESD的敏感度增加,使LED抗ESD能力减弱。     

Microwave annealing effects on ZnO films deposited by atomic layer deposition

Zinc oxide thin films deposited on glass substrate at 150°C by atomic layer deposition were annealed by the microwave method at temperatures below 500 °C.The microwave annealing effects on the structural and luminescent properties of Zn O films have been investigated by X-ray diffraction and photoluminescence.The results show that the MWA process can increase the crystal quality of Zn O thin films with a lower annealing temperature than RTA and relatively decrease the green luminescence of Zn O films.The observed changes have demonstrated that MWA is a viable technique for improving the crystalline quality of Zn O thin film on glass.     

利用介质光子晶体提高红光发光二极管的光通量的研究

本文利用光子晶体的光栅衍射原理, 在发光二极管(light emitting diode, LED)上制作了光子晶体结构以提高出光效率. 在红光LED器件中引入了SiO₂层的介质光子晶体结构, 并进行了相应的理论分析和实验验证. 结果表明: 介质光子晶体结构对于提高红光LED器件的光提取效率有显著效果, 引入介质光子晶体后, 红光LED的光通量比普通LED增加了26%.