Influence of oxygen content on the crystallinity of MgO layers in magnetic tunnel junctions

With RF sputtering process, Si/Si02/Ta/Ru/Ta/CoFeB/MgO/CoFeB/Ta/Ru structure has been grown on Si （100） substrate. Attempting different targets and adjusting the oxygen dose, the crystallization quality of the MgO layer is studied. The X-ray diffraction measurements demonstrate that crystal structure and crystallization quality of MgO layers are related to the type of target and concentration of oxygen in sputtering process. With the method sputtering Mg in an ambient flow of oxygen, not only the crystallization quality of a normal MgO layer with lattice constant of 0.421 nm is improved, but also a new MgO crystal with lattice constant of 0.812 nm is formed and the perpendicular magnetic anisotropy of CoFeB is enhanced. Also it is found that crystallization quality for both the normal MgO and new MgO is more improved with MgO target and same oxygen dose, which means that this new method is helpful to form a new structure of MgO annealed at 400 ℃ in vacuum. with lattice constant of 0.812 nm. All of the samples were     

使用IEEE 802.21的WLAN与WiMAX网的融合与切换

为了给移动用户提供最好的无所不在的无线宽带接入,不同无线网的融合是当前通信领域的热点研究。而切换管理又是解决无线网无缝融合的最具挑战性的问题。文中讨论了IEEE 802.11WLAN与IEEE 802.16e移动WiMAX网的融合与切换管理。描述其结构和应用场景,介绍了IEEE802.21,它为介质独立的异类网切换提供了一个信令框架,提出了如何使用IEEE802.21解决WLAN与移动WiMAX网之间的切换,并给出了详细的切换过程。说明了使用IEEE 802.21解决WLAN与移动WiMAX网之间的切换是可行有效的。     

PMIPv6与MIH相结合的异构网切换方案及其性能分析

分析了PMIPv6的切换延迟,介绍了PMIPv6使用MIH（Media Independent Handover）提供异构网之间低的包丢失与低延时的无缝切换方案,其性能分析结果显示了该方案的有效性。     

结构独立开放并有QoS保证的异构无线网漫游方案

未来移动通信将包含多种不同的无线网络存取技术与标准 ,移动终端如何运转在不同的无线网络系统下 ,如何使用不同的无线存取技术 ( UMTS,cdma2 0 0 0 ,GSM/GPRS,WLAN,WPAN等 ) ,这是本篇要考虑的问题。并提出了一个结构独立开放并有 Qo S保证的基于 All- IP的异构无线网漫游方案     

NetWare4.X通信服务的实现

ＮｅｔＷａｒｅ４．Ｘ通信服务的实现●徐大庆图１ＮｅｔＷａｒｅ操作系统结构计算机通信的两个基本方面是通信协议和使用协议的网络环境。ＮｅｔＷａｒｅ基本结构使ＮｅｔＷａｒｅ能很容易、很自然地与其它计算机系统通信。一、ＮｅｔＷａｒｅ的通信结构了解ＮｅｔＷａｒ...     

钒受主能级在n型4H-SiC中的深能级瞬态傅里叶谱和光致发光

借助深能级瞬态傅里叶谱研究了钒离子注入在SiC中引入的深能级陷阱.掺人的钒在4H-SiC中形成两个深受主能级,分别位于导带下0.81和1.02eVt处,其电子俘获截面分别为7.0 × 10-16和6.0×10-16cm2.对钒离子注入4H-SiC样品进行低温光致发光测量,同样发现两个电子陷阱,分别位于导带下0.80和1.6eV处.结果表明,在n型4H-SiC掺入杂质钒可以同时形成两个深的钒受主能级,分别位于导带下0.8±0.01和1.1±0.08eV处.     

钒掺杂形成半绝缘6H-SiC的补偿机理

研究了钒掺杂生长半绝缘6H-SiC的补偿机理.二次离子质谱分析结果表明,非故意掺杂生长的6H-SiC中,氮是主要的剩余浅施主杂质.通过较深的钒受主能级对氮施主的补偿作用,得到了具有半绝缘特性的SiC材料.借助电子顺磁共振和吸收光谱分析,发现SiC中同时存在中性钒(V4 )和受主态钒(V3 )的电荷态,表明掺入的部分杂质钒通过补偿浅施主杂质氮,形成受主态钒,这与二次离子质谱分析结果相吻合.通过对样品进行吸收光谱和低温光致发光测量,发现钒受主能级在6H-SiC中位于导带下0.62eV处.     

Dopant diffusion and surface morphology of vanadium implanted 4H-silicon carbide

The diffusion behaviours of vanadium implanted p- and n-type 4H-SiC are investigated by using the secondary ion mass spectrometry (SIMS). Significant redistribution, especially out-diffusion of vanadium towards the sample surface is not observed after 1650℃ annealing for both p- and n-type samples. Atomic force microscopy (AFM) is applied to the characterization of surface morphology, indicating the formation of continuous long furrows running in one direction across the wafer surface after 1650℃ annealing. The surface roughness results from the evaporation and re-deposition of Si species on the surface during annealing. The chemical compositions of sample surface are investigated using x-ray photoelectron spectroscopy (XPS). The results of C 1s and Si 2p core-level spectra are presented in detail to demonstrate the evaporation of Si from the wafer and the deposition of SiO₂ on the sample surface during annealing.     

Study of （Ga,Mn）N prepared by Mn-ion implantation using optical techniques

This paper reports that （Ga, Mn）N is prepared using implantation of 3at.% Mn Ions into undoped GaN. Structural characterization of the crystals was performed using x-ray diffraetion（XRD）. Detailed XRD measurements have revealed the characteristic of Mn-ion implanted GaN with a small contribution of other compounds. With Raman spectroscopy measurements, the spectra corresponding to the intrinsic GaN layers demonstrate three Raman active excitations at 747, 733 and 566 cm-1 identified as EI（LO）, A1 （LO） and E~, respectively. The Mn-doped GaN layers exhibit additional excitations at 182, 288, 650 725, 363, 506cm^-1 and the vicinity of E~ mode. The modes observed at 182, 288, 650 725em 1 are assigned to macroscopic disorder or vacancy-related defects caused by Mn-ion implantation. Other new phonon modes are assigned to Mnx-Ny, Gax-Mny modes and the local vibrational mode of Mn atoms in the （Ga, Mn）N, which are in fair agreement with the standard theoretical results.     

TD—SCDMA网络与McWill网络的紧耦合互连

本文介绍了TD-SCDMA与McWill的特点与发展状况,提出了两者紧耦合的构想,设计了两者紧耦合互连的结构框架、两者紧耦合互连所用的标准协议与特定协议.