In0.53Ga0.47As／InP异质结光电二极管的深能级

采用深能级瞬态谱仪（ＤＬＴＳ）测定了Ｉｎ０．５３Ｇａ０．４７Ａｓ／ＩｎＰ异质结光电二极管的ＤＬＴＳ谱。发现存在一电子陷阱，该陷阱能级位于导带底以下０．４４ｅＶ处，能级密度为３．１０×１０１３ｃｍ－３，电子俘获截面为１．７２×１０－１２ｃｍ－２。由于深能级的存在，导致了该器件存在一种新的“暗电流”──“深能级协助隧穿电流”。     

多孔氧化铝模板催化制备定向碳纳米管阵列

Well-aligned open-ended multi-walled carbon nanotube (MWCNT) arrays were prepared via chemical vapor deposition (CVD) method in porous anodic aluminum oxide (AAO) templates without depositing any transition metals as catalyst. Effects of the CVD temperature and heat treatment were studied in detail.Well-aligned open-ended MWCNT arrays were obtained at the CVD temperature above 600 ℃; when CVD temperature is reduced to around 550 ℃, CNTs, CNFs and other structures existed at the same time; no CNTs or carbon nanofibres (CNFs) could be found as the CVD temperature is below 500 ℃, and only amorphous carbon in the porous AAO template was found. Experimental results showed that the AAO template is catalytic during the CVD process, and it has the following two effects: to catalyze thermal decomposition of acetylene and to catalyze conversion of carbon decomposed from acetylene into CNTs or CNFs. Heat treatment could improve the graphitization degree, but it might also introduce new defects.     

多孔硅的形成与光致发光谱

介绍了用阳极氧化腐蚀形成多孔硅的工艺，并分析了它的微结构，实验测定了多孔硅光致发光谱（ＰＬ），由ＰＬ谱的峰值位于可见光区，不同于Ｓｉ的带隙能量；用纳米量子限制效应（Ｑ－ＣＥ），解释了多孔硅中进入量子线中电子和空穴能量增量为ΔＥｃ和ΔＥｖ，于是多了孔硅有效带宽成为Ｅ＝Ｅ。＋ΔＥ。而Ｅ。是Ｓｉ的带宽为ｌ．０８ｅＶ，ΔＥｃ和上ΔＥｖ分别为ｈ２／４ｍｅｑ２和ｈ２／４ｍｈｑ２，由此计算与实验结果一致。     

多孔氧化铝模板催化制备定向碳纳米管阵列

在不加过渡金属做催化剂的前提下,利用化学气相沉积法在二次阳极氧化法制得的多孔氧化铝模板中制备沉积了定取向碳纳米管阵列。考察了不同沉积温度以及退火处理对沉积结果的影响。温度达到600℃以上时,能得到开口的、定取向的多壁碳纳米管阵列；当沉积温度降至550℃左右时,沉积结果中存在碳纳米管、纳米纤维以及类似于弯曲的竹节状的结构；温度继续降低至500℃以下时,不能得到碳纳米管或碳纳米纤维；从实验结果中可以得出,在氧化铝模板中沉积碳纳米管过程中氧化铝起到了催化乙炔裂解以及催化沉积的碳石墨化成碳纳米管两种作用。另外,退火处理虽然能够提高沉积的碳纳米管的石墨化程度,但是也可能会引入新的缺陷。