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GaN基高电子迁移率晶体管(HEMT)器件具有抗高频、耐高温、大功率、抗辐射等特性,在核反应堆、宇宙探测等辐射环境中具有广阔的应用前景。借助SRIM软件仿真1.8 MeV质子辐射对不同AlGaN势垒层纵向尺寸下的常规耗尽型器件内部产生空位密度的影响,并观察空位密度随深度的变化规律。在最优AlGaN势垒层厚度条件下,通过仿真对比5种不同栅氧层材料的MIS-HEMT器件,发现氮化铝(AlN)栅氧层材料具有相对较好的抗辐射效果。 相似文献
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To improve the physiochemical properties of gellan gum(GG), GG was modified with acrylamide and trimethylolpropane triglycidyl ether(TTE). The structure and morphology of modified GG were characterized by Fourier transform infrared(FT-IR) spectroscopy, X-ray diffraction(XRD), differential scanning calorimetry(DSC) and scanning electron microscopy(SEM). The characteristic peaks at 3448, 2788, 1654, 1411, 1117 and 1044 cm~(-1) in the FT-IR spectrum confirm the modification. The XRD and DSC data revealed that the modification enhanced the thermal stability of GG. SEM analysis suggested the modification introduced a porous microstructure, resulting in the adsorption of crystal violet. In addition, the adsorption capacity, thermal stability and swelling property of GGTTE3 were superior to GGTTE1, GGTTE2, GGTTE4 and GGTTE5. 相似文献
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