Increase of Calcium Levels at Interphase in NIH 3T3 Cells

The fluorescent calcium ion indicator dye Fluo-3 and DNA-binding dye Hoechst 33342 were employed to determine, in a quantitative microspectrofluorometric study, the intracellular calcium ion concentration ([Ca~(2+)]_i) and the DNA content of individual living NIH3T3 cells. The well-separated excitation and emission properties of these dyes allowed us to establish for each cell both the phase of the cell cycle using DNA content and [Ca~(2+)]_i. We found that the transition from G_1, through S, to the G_2 phase is accompanied by a two-fold increase in [Ca~(2+)]_i. The [Ca~(2+)]_i was inhomologous in each phase of the interphase (G_1, S and G_2) although [Ca~(2+)]_i in the S and G_2 phases was never lower than certain threshold values in the G_1 and S phases respectively. [Ca~(2+)]_i in G_0 cells was lower than that in G_2 cells. These changes in [Ca~(2+)]_i suggest that [Ca~(2+)]_i may be an import regulator of cell cycle progression.     

基于自主管理机制的网格监测系统故障诊断与恢复

为了使网格监测系统能够自主地处理自身的故障、应对复杂多变的网格环境,基于自主组织、管理机制和自主计算技术中的自修复、自愈等思想,R-Net监测系统(RNMS)对监测系统故障的探测、诊断、处理和恢复进行了研究,并把重点放在节点组的故障恢复上.实现了网格监测系统故障诊断与恢复机制,使得监测系统能够无需管理人员的参与、自主地处理一些常见的故障,降低了系统维护的复杂性和成本,增加了系统的易用性和可靠性.     

人3型腺病毒六邻体蛋白同源建模及其进化轨迹分析

用同源建模方法构建了人3型腺病毒六邻体完整的空间结构, 对此结构模型的合理性进行检验, 并通过基于多重序列比对的进化轨迹分析发现, 不同型别的人腺病毒六邻体型特异性序列主要存在于六邻体的塔区上, 结合二级结构分析, 预测位于六邻体塔区表面的几个环区是型特异性中和表位的所在区域.     

基于分子动力学的氧化石墨烯拉伸断裂行为与力学性能研究

与石墨烯相比,氧化石墨烯(graphene oxide, GO)的亲水性、分散性和反应活性更好,更易于作为增强材料而研发生成性能超常的复合材料,但另一方面,由于其电子结构较为复杂,致使目前有关力学方面的研究存在一定差异.本文利用分子动力学方法,建立了羟基、羧基和环氧基等官能团随机分布的GO原子模型;通过单向拉伸模拟,分析了其断裂行为,结果表明,远离羟基和羧基的环氧基对断裂具有"诱导"作用,并从化学成键、体系能量和应力分布三个角度对其机理进行了阐释;此外,进一步研究了拉伸应力-应变曲线、极限强度、极限应变等力学性能与含氧官能团覆盖度间的关系,结果表明,极限强度、极限应变均随含氧官能团覆盖度的增大而呈减小趋势.分析认为,主要原因是官能团的出现对石墨烯面内的sp~2杂化形式造成了破坏,进而使得原子间键合能弱化,随着含氧官能团的覆盖度的增大,被弱化的键合能的数量和程度将越大,从而使得GO的极限强度、极限应变等越低.研究结果可为GO的基础研究和工程应用提供参考.     

二值图像中的数据隐藏算法

 本文证明了在一个m×n的二值图像块中至多改变1个像素时所能隐藏的比特数的上界为?(log₂(mn+1)」,并实际构造了达到此上界的信息隐藏算法.文中归纳了一些选择修改像素位置的规则,较好地保持了数据嵌入后图像的质量.对算法的鲁棒性和安全性进行了分析.用3个例子—数字手写签名中认证信息的嵌入、二值电子文档的窜改检测和卡通图像中注释信息的嵌入说明了本文算法可能的应用.     

Sensitivity of heavy-ion-induced single event burnout in SiC MOSFET

The energy deposition and electrothermal behavior of SiC metal-oxide-semiconductor field-effect transistor(MOSFET)under heavy ion radiation are investigated based on Monte Carlo method and TCAD numerical simulation.The Monte Carlo simulation results show that the density of heavy ion-induced energy deposition is the largest in the center of the heavy ion track.The time for energy deposition in SiC is on the order of picoseconds.The TCAD is used to simulate the single event burnout(SEB)sensitivity of SiC MOSFET at four representative incident positions and four incident depths.When heavy ions strike vertically from SiC MOSFET source electrode,the SiC MOSFET has the shortest SEB time and the lowest SEB voltage with respect to direct strike from the epitaxial layer,strike from the channel,and strike from the body diode region.High current and strong electric field simultaneously appear in the local area of SiC MOSFET,resulting in excessive power dissipation,further leading to excessive high lattice temperature.The gate-source junction area and the substrate-epitaxial layer junction area are both the regions where the SiC lattice temperature first reaches the SEB critical temperature.In the SEB simulation of SiC MOSFET at different incident depths,when the incident depth does not exceed the device's epitaxial layer,the heavy-ion-induced charge deposition is not enough to make lattice temperature reach the SEB critical temperature.     

K_(0.9)Mo_6O_(17)新型导电陶瓷的制备与导电性研究

利用湿化学方法,以碳酸钾和钼酸为原料,聚乙二醇为分散剂和螯合剂,制备了K0.9Mo6O17前驱体。在碳粉保护环境及500℃温度下对所得前驱体进行煅烧后,获得了K0.9Mo6O17粉体。最后,利用此粉体制得了导电陶瓷。借助差示扫描量热仪、XRD、SEM、电化学测试系统等仪器研究了材料的相组成、微观结构及导电性。结果表明,K0.9Mo6O17粉体和陶瓷体均具有单斜晶系结构;该多晶K0.9Mo6O17陶瓷材料的室温电导率达到了0.1S/cm,且其电导率随着温度的升高而升高。利用电子跃迁和晶体场理论对K0.9Mo6O17陶瓷的导电机理进行了分析。