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张银珠 叶志镇 吕建国 何海平 顾修全 赵炳辉 Zhang Yinzhu Ye Zhizhen Lü Jianguo He Haiping Gu Xiuquan Zhao Binghui 《半导体学报》2007,28(Z1):322-325
采用脉冲激光沉积技术制备了Li-N双受主共掺杂p型ZnO薄膜,其中Li来自Li掺杂ZnO陶瓷靶,N来自N2O生长气氛.室温Hall测试发现Li-N共掺p型ZnO薄膜的最低电阻率为3.99Ω·cm,迁移率为0.17cm2/(V·s),空穴浓度为9.12×1018cm-3.PL谱测试发现了与Li受主和N受主态相关的发光峰,其受主能级分别约为120和222meV.由p-ZnO:(Li,N)薄膜制备的ZnO同质p-n结具有整流特性. 相似文献
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p-ZnxMg1-xO:Na/n-ZnO p-n junction light emitting diode (LED) was produced on n-ZnO (0001) single-crystal substrate using pulsed laser deposition. The realization of band gap engineering was achieved by the incor-poration of Mg in ZnO layers and was confirmed by photoluminescence spectrum. The p-type ZnxMg1-xO:Na film with low resistance was obtained at 500 ℃ and in which, Na has taken effect evidenced by Hall and X-ray photo-electron spectroscopy measurements. The current-voltage curve of LED showed a rectifying behavior and obvious electroluminescence was realized by feeding a direct current up to 40 mA. Furthermore, its structural and electric characters are discussed as well. 相似文献
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Li-N dual-doped p-type ZnO (ZnO:(Li, N)) thin films are prepared by pulsed laser deposition. The optical properties are studied using temperature-dependent photoluminescence. The Lizn-No complex acceptor with an energy 1evel of 138 me V is identified from the free-to-neutral-acceptor (e, A0 ) emission. The Haynes factor is about 0.087 for the Lizn-No complex acceptor, with the acceptor bound-exciton binding energy of 12meV. Another deeper acceptor state located at 248 meV, also identified from the (e, A0) emission, is attributed to zinc vacancy acceptor. The two acceptor states might both contribute to the observed p-type conductivity in ZnO:(Li,N). 相似文献
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固体源化学气相沉积生长c轴平行于衬底的ZnO薄膜 总被引:1,自引:0,他引:1
报道了利用固体源化学气相沉积(SS-CVD)技术制备出c轴平行于衬底的ZnO薄膜.固体Zn(CH3COO)2*2H2O为前驱体,在不同的生长条件沉积ZnO薄膜,并利用X射线衍射(XRD)、原子力显微镜(AFM)、光学透射谱对其性能进行研究.结果表明,在玻璃衬底上,当衬底温度较低(200℃)、源温较高(280℃)时,ZnO薄膜呈(100)与(110)的混合取向,即c轴平行于衬底.对此,文中给出了一个可能的定性解释.AFM测试表明薄膜表面平整度不够理想,该薄膜在可见光区域透射率为85%,光学带宽约为3.25eV. 相似文献
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固体源化学气相沉积生长c轴平行于衬底的ZnO薄膜 总被引:14,自引:7,他引:7
报道了利用固体源化学气相沉积 (SS- CVD)技术制备出 c轴平行于衬底的 Zn O薄膜 .固体 Zn(CH3COO) 2 ·2 H2 O为前驱体 ,在不同的生长条件沉积 Zn O薄膜 ,并利用 X射线衍射 (XRD)、原子力显微镜 (AFM)、光学透射谱对其性能进行研究 .结果表明 ,在玻璃衬底上 ,当衬底温度较低 (2 0 0℃ )、源温较高 (2 80℃ )时 ,Zn O薄膜呈 (10 0 )与(110 )的混合取向 ,即 c轴平行于衬底 .对此 ,文中给出了一个可能的定性解释 .AFM测试表明薄膜表面平整度不够理想 ,该薄膜在可见光区域透射率为 85 % ,光学带宽约为 3.2 5 e V. 相似文献