一种新型高线性高频有源电感

基于回转器原理,提出了一种具有高线性度、高Q值和大电感值的新型高频有源电感。将一MOS管与回转器中的负跨导器并联,形成跨导退化结构,降低了输入信号的波动的影响,实现了高线性度。在回转器的正跨导器中,引入了反馈电阻支路,增加了回转通路,实现了大电感值。将负电容电路与有源电感的输入端相连,减小了其等效输入电容和等效电阻,实现了宽工作频带与高Q值。对有源电感进行验证表明,电感工作频带为1~12GHz,在6.55GHz的高频下,Q值达到峰值566,同时,电感值可在19.6~26.3nH范围内调谐,Q值的线性度Q-1dB为-18dBm,同时在8.15GHz下,L值的线性度L-1dB为-20dBm。     

Studies on the superconductivity for the “111” type iron arsenide superconductor

The “111” type Li _x FeAs (x ranges from 0.8 to 1.2) with Cu₂Sb type tetragonal structure was synthesized with T _c 18 K. The isostructure NaFeAs was further studied, which shows superconductivity with T _c up to 26 K. The effect of pressure on superconductivity was investigated.     

Mn3Zn0.8Ni0.2N的高压同步辐射研究

 利用金刚石对顶压砧,对钙钛矿型金属锰化物Mn₃Zn_0.8Ni_0.2N进行了原位高压同步辐射角散X射线衍射研究。研究表明,在0~29.9 GPa的压力区间内,样品没有发生结构相变,因而在该压力下样品的物性变化并非由结构相变所导致。卸压以后,样品的特征峰都回到了初始位置。通过Birch-Murnaghan方程,拟合得到了样品的体弹模量为86.5 GPa。     

Effects of pressure and/or magnetism on superconductivity of δ-MoN single crystal

Effects of pressure and/or magnetism on the critical superconducting temperature(Tc)ofδ-Mo N single crystal were investigated using a Maglab system.Theδ-Mo N single crystal was synthesized at extreme conditions of high pressure and high temperature.The carrier density ofδ-Mo N single crystal as a function of applied pressure was determined using Hall coefficient measurement.     

Molecular dynamics study on splitting of hydrogen-implanted silicon in Smart-Cut® technology

Defect evolution in a single crystal silicon which is implanted with hydrogen atoms and then annealed is investigated in the present paper by means of molecular dynamics simulation. By introducing defect density based on statistical average, this work aims to quantitatively examine defect nucleation and growth at nanoscale during annealing in Smart-Cut~ technology. Research focus is put on the effects of the implantation energy, hydrogen implantation dose and annealing temperature on defect density in the statistical region. It is found that most defects nucleate and grow at the annealing stage, and that defect density increases with the increase of the annealing temperature and the decrease of the hydrogen implantation dose. In addition, the enhancement and the impediment effects of stress field on defect density in the annealing process are discussed.     

Superconductivity in Topological Semimetal θ-TaN at High Pressure

Recently,θ-TaN was proposed to be a topological semimetal with a new type of triply degenerate nodal points.Here,we report studies of pressure dependence of transport,Raman spectroscopy and synchrotron x-ray diffraction on θ-TaN up to 61 GPa.We find that θ-TaN becomes superconductive above 24.6 GPa with T_c at 3.1 K.The θ-TaN is of n-type carrier nature with carrier density about 1.1 × 10~(20)/cm~3 at 1.2 GPa and 20 K, while the carrier density increases with the pressure and saturates at about 40 GPa in the measured range.However,there is no crystal structure transition with pressure up to 39 GPa,suggesting the topological nature of the pressure induced superconductivity.     

通过调控肿瘤代谢增强T细胞抗肿瘤活性

肿瘤免疫治疗是一种新型的癌症治疗方法。 然而,现阶段肿瘤免疫疗法的临床响应率低等问题严重制约了其进一步应用。 其根本原因在于肿瘤组织免疫抑制微环境限制了T细胞的抗肿瘤活性,而肿瘤组织代谢改变在肿瘤免疫抑制微环境形成过程中起关键作用。 本文重点总结了通过调控肿瘤的有氧糖酵解、氨基酸代谢和脂肪酸代谢增强T细胞的抗肿瘤活性。 最后,提出当前肿瘤代谢调控研究方面仍然存在的问题,并对纳米载体在肿瘤代谢领域的发展前景进行了展望。     

Pressure-induced phase transitions in single-crystalline Cu4Bi4S9 nanoribbons

In situ angle dispersive synchrotron X-ray diffraction and Raman scattering measurements under pressure are em- ployed to study the structural evolution of Cu4Bi4S9 nanoribbons, which are fabricated by using a facile solvothermal method. Both experiments show that a structural phase transition occurs near 14.5 GPa, and there is a pressure-induced re- versible amorphization at about 25.6 GPa. The electrical transport property of a single Cu4Bi4S9 nanoribbon under different pressures is also investigated.     

“111”铁基超导体系的发现及压力效应研究

2008年发现的铁基超导体引发了全球超导研究的热潮。在本研究小组发现的铁基“111”体系的基础上,重点介绍“111”体系铁基超导体的压力效应,包括:“111”体系的3个组元LiFeAs、LiFeP、NaFeAs的超导转变随压力的演化;运用压力调控,获得“111”体系的最高超导转变温度;结合同步辐射技术,发现压力调控的“111”型铁基超导体的等结构演化以及对超导起关键作用的As-Fe-As键长和键角与超导转变温度的关联。     

压力诱导酌拓扑绝缘体化合物Bi2Te3常压相的超导性

通过高压电阻测量,发现了拓扑绝缘体化合物BizTe3压力诱导的超导性,在3-6GPa的压力范围内,超导临界温度L约为3K．高压下原位同步辐射的结果证明这个超导相来源于常压相结构．通过霍尔效应的测量,发现超导的Bi2Te3样品的载流子为P型．对高压同步辐射结果Reitveld精修得到的晶格参数和原子位置,并以此进行第一性...