Superconductivity of bilayer titanium/indium thin film grown on SiO_2/Si(001)

Bilayer superconducting films with tunable transition temperature(Tc) are a critical ingredient to the fabrication of high-performance transition edge sensors. Commonly chosen materials include Mo/Au, Mo/Cu, Ti/Au, and Ti/Al systems. Here in this work, titanium/indium(Ti/In) bilayer superconducting films are successfully fabricated on SiO_2/Si(001)substrates by molecular beam epitaxy(MBE). The success in the epitaxial growth of indium on titanium is achieved by lowering the substrate temperature to-150?C during indium evaporation. We measure the critical temperature under a bias current of 10 μA, and obtain different superconducting transition temperatures ranging from 645 m K to 2.7 K by adjusting the thickness ratio of Ti/In. Our results demonstrate that the transition temperature decreases as the thickness ratio of Ti/In increases.     

配网合环风险评估实时仿真平台研究与应用

在社会经济飞速发展中,人们的生活质量越来越高,用电客户对电能质量的要求也随之提升,如何保障用户的不间断供电成为电力行业探讨的主要问题。为了进一步提高配电网的供电效率和质量,各地配网调度开始尝试不停电转供电。由于配电网本身具有不可测和不可观的特征,在实践应用期间受到的影响因素较多,如果基础条件不充足,那么很可能导致合环操作出现过大环流,直接影响正常客户的供电需求。因此,本文在了解配电网合环操作分类的基础上,根据近年来配电网系统技术研究累积经验,深层探讨配电网合环风险评估实时仿真平台,以此为新时代下的电力行业发展提供有效依据。     

纳米Cu固体材料微结构的正电子湮没研究

纳米材料的性能不仅与纳米晶粒本身的结构有关,而且与纳米晶体之间界面的微观结构有关.纳米粉在压实成纳米块过程中很难消除微孔洞,并且在压实过程中也会给晶粒引入结构缺陷.本文用正电子湮没谱学研究了纳米Cu固体材料微结构,发现在两种不同条件下压制成型的纳米Cu固体内部的晶粒界面均存在着单空位及空位团等缺陷.空位团的大小随着压制压力的增加而略有减小.通过退火实验发现纳米Cu固体的界面缺陷具有较好的热稳定性.即使在900℃高温下退火也只能使部分缺陷得到恢复,但是低压力下压制的样品中的缺陷恢复需要更高的温度.     

MoO3/Al2O3催化剂中Mo分散的正电子研究

用浸渍法制备了一系列不同Mo含量的MoO₃/Al₂O₃催化剂.测量了这些样品的正电子湮没寿命谱(PALS)与符合多普勒展宽(CDB)谱,以研究其孔洞结构以及Mo分散.正电子寿命测量结果表明,Al₂O₃载体中存在两种不同尺寸的孔洞.掺入MoO₃之后,Mo原子主要进入Al₂O₃的大孔中,使孔洞体积减小.符合多普勒展宽谱结果表明,当MoO 关键词： 3/Al₂O₃催化剂')" href="#">MoO₃/Al₂O₃催化剂 正电子湮没寿命谱 符合多普勒展宽 Mo 分散     

MoO3/Al2O3催化剂中Mo分散的正电子研究

用浸渍法制备了一系列不同Mo含量的MoO3/Al2O3催化剂.测量了这些样品的正电子湮没寿命谱(PALS)与符合多普勒展宽(CDB)谱,以研究其孔洞结构以及Mo分散.正电子寿命测量结果表明,Al2O3载体中存在两种不同尺寸的孔洞.掺入MoO3之后,Mo原子主要进入Al2O3的大孔中,使孔洞体积减小.符合多普勒展宽谱结果表明,当MoO3的质量含量仅为3%时,多普勒展宽谱即发生了显著的改变.这表明Mo已分散至Al2O3的孔洞中,使得正电子测量所得到的电子动量分布发生改变.在MoO3含量达到18%之后,Al2O3中大孔的体积减小到尺寸与小孔相当,此后正电子寿命和多普勒展宽谱不再随MoO3含量变化,表明Mo分散逐渐达到饱和.     

Neutralization process of Xe^q＋ ion grazing on Al（111） surface

A code has been developed to simulate the neutralization and grazing process of slow highly charged ion Xe^q＋ on Al（111） surface under the classical-over-the-barrier model. The image energy gain of Xeq＋ ions are calculated and compared with experiment data. The simulation results of image energy gain are in good agreement with the experiment data. Meanwhile, in the present work, the reflection coefficient of incident Xe^q＋ on Al（111） surface as a function of the incidence angle, energy and charge state is also studied.     

UHF频段OFDM移动多媒体传感器网络节点射频模块研究

提出一种UHF频段OFDM移动多媒体传感器网络节点射频模块设计方案.它采用直接变频和功率回退技术,支持TDMA移动网络高速多路数据传输,具有较高的线性度、灵敏度、动态范围和带外抑制能力,可应用于要员车队监护、公安应急指挥和部队演习监视等系统.     

被动法高浓铀年龄测量技术研究

利用HPGe-γ谱仪测量了多个年龄段的HEU样品, 获得了样品中N(214Bi)/N(234U)的值, 从而计算得到了HEU的年龄,其测量结果与参考值吻合较好。最后结合实验结果,系统分析了其它可能用于测量高浓铀年龄的方法,并对各种方法的可行性进行了分析。 结果表明, 214Bi/234U比值法是最佳的选择。N(231Pa)/N(235U)法中对γ谱如何解谱还需作进一步研究。 The HEU sample was measured by HPGe- γ spectrometry. By analyzing the detected γ spectrum, the N(214Bi)/N(234U) of the HEU sample was acquired, and the age of HEU samples was determined, which was coincided with the reference value. At last, the other potential methods of determining the age of HEU were analyzed systematically. N(214Bi)/N(234U) is more feasible,and algorithm of spectrum decomposition in N(231Pa)/N(235U) should be studied further.     

Design,fabrication, and characterization of Ti/Au transition-edge sensor with different dimensions of suspended beams

For photon detection, superconducting transition-edge sensor (TES) micro-calorimeters are excellent energy-resolving devices. In this study, we report our recent work in developing Ti-/Au-based TES. The Ti/Au TES devices were designed and implemented with a thickness ratio of 1:1 and different suspended structures using micromachining technology. The characteristics were evaluated and analyzed, including surface morphology, 3D deformation of suspended Ti/Au TES device structure, I-V characteristics, and low-temperature superconductivity. The results showed that the surface of Ti/Au has good homogeneity and the surface roughness of Ti/Au is significantly increased compared with the substrate. The structure of Ti/Au bilayer film significantly affects the deformation of suspended devices, but the deformation does not affect the I-V characteristics of the devices. For devices with the Ti/Au bilayer (150μm×150μm) and beams (100μm×25μm), the transition temperature (T_c) is 253 mK with a width of 6 mK, and the value of the temperature sensitivity α is 95.1.