侧墙技术在相变存储器中的应用

从相变存储器(phase change random access memory,PCRAM)的基本结构和工作原理出发,首先介绍了PCRAM的技术优势、面临的技术挑战、常用的解决策略以及存在的相应问题;接着阐述了在微电子加工中广泛应用的关键工艺——侧墙技术,并将其在PCRAM中的应用成果进行了分类;然后从加热电极的制备、相变材料限制结构的制备、新相变材料的制备与表征和器件间互联等4个方面展开叙述;最后展望了该技术在相变存储领域应用发展的趋势。侧墙技术因其具备自对准的特点,制备工艺可控性好,制备精度不依赖于光刻精度,在纳米技术飞速发展的今天,侧墙技术将会在更高精度上发挥其作用。     

大面积非光刻纳米电极间隙的制备

A lithography-independent and wafer scale method to fabricate a metal nanogap structure is demonstrated. Polysilicon was first dry etched using photoresist （PR） as the etch mask patterned by photolithography. Then, by depositing conformal SiO2 on the polysilicon pattern, etching back SiO2 anisotropically in the perpendicular direction and removing the polysilicon with KOH, a sacrificial SiO2 spacer was obtained. Finally, after metal evaporation and lifting-off of the SiO2 spacer, an 82 nm metal-gap structure was achieved. The size of the nanogap is not determined by the photolithography, but by the thickness of the SiO2. The method reported in this paper is compatible with modern semiconductor technology and can be used in mass production.     

Simple and low-cost fabrication of a metal nanoplug on various substrates by electroless deposition

An electroless deposition(ELD) method is introduced to fabricate a metal nanoplug for its advantages of simplicity,low cost and auto-selectivity.It was demonstrated that nanoplugs of less than 50 nm in diameter can be fabricated by ELD nickel on various substrates,such as silicon,tungsten and titanium nitride.The main composition of the ELD nanoplug was characterized as nickel by an energy dispersive X-ray microanalyzer.A functional vertical phase-change random access memory(PCRAM) device with a heater diameter of around 9μm was fabricated by using the ELD method.TheⅠ-Ⅴcharacteristics demonstrated that the threshold current is only 90.8μA.This showed that the ELD process can satisfy the demands of PCRAM device application,as well as device performance improvement.The ELD process provides a promising method for the simple and low-cost fabrication of metal nanoplugs.     

用化学镀方法在不同衬底上制备纳米尺度金属插塞电极的研究

纳米尺度金属插塞电极在现代纳米电子学中有很重要的应用价值。本文研究了用化学镀方法制备纳米尺度金属插塞电极,具有简单、低成本和自选择性的优点。化学镀甚至可以分别在硅衬底、钨衬底和氮化钛衬底上制备出直径小于50纳米的镍插塞电极。用能量色散X射线微量分析仪（EDXM）测定出用化学镀在硅衬底上制备出的纳米尺度插塞电极的主要成分是镍。最后,采用化学镀方法,制备了直径为9微米的插塞电极的垂直结构相变存储器器件。通过研究器件的电流-电压特性表明,化学镀方法可以满足器件应用要求。因此,用简单、低成本的化学镀方法来制备纳米尺度金属插塞电极,对器件的应用有重要意义。