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钳位电压(Vpin)是影响CMOS图像传感器(CIS)中钳位光电二极管(PPD)电荷转移效率和满阱电荷容量的关键物理量.在辐照条件下,Vpin受辐射总剂量(TID)增加而升高,因此研究其机理对抗辐照CIS的设计有重要意义.文章利用TCAD仿真软件分析了 CIS器件的电学特性,研究了 Vpin受TID影响的机理.结果表明,当辐照引起的氧化物陷阱电荷浓度达到3×1016 cm-3时,浅沟槽隔离(STI)附近的耗尽区将PPD中的pin层与地极电学隔离,从而导致pin层电势易受到传输晶体管TG沟道电势影响而增加,使得相同电子注入条件下PPD可存储的电子增多,复位所需电压增大,导致Vpin随着辐射总剂量增加而增大. 相似文献
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针对CMOS图像传感器高精度和低功耗的需求,设计了一种14位列级模数转换器(ADC)。在传统斜坡式模数转换器(RAMP ADC)架构基础上,采用了3位逐次逼近型模数转换器(SAR ADC)与11位RAMP ADC相结合的两步式结构,有效缩短了量化时间。RAMP ADC部分采用高低时钟的计数方法,可显著降低计数区间内的功耗。同时,提出了RAMP-SAR-RAMP切换的相关双采样逻辑,可进一步减少静态随机存取存储器(SRAM)数量,从而缩小版图面积。采用0.18μm标准CMOS工艺进行仿真,结果表明:在600 MHz时钟、单沿计数的工作模式下,ADC量化时间为9.32μs,在1.8 V数字电源电压下,计数区间内功耗均值为8.51μW。 相似文献
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ZnO-Based Transparent Thin-Film Transistors with MgO Gate Dielectric Grown by in-situ MOCVD
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ZnO transparent thin-film transistors with MgO gate dielectric were fabricated by in-situ metal organic chemicM vapor deposition (MOCVD) technology. We used an uninterrupted growth method to simplify the fabrication steps and to avoid the unexpectable contaminating during epitaxy process. MgO layer is helpful to reduce the gate leakage current, as well as to achieve high transparency in visible light band, due to the wide band gap (7. 7eV) and high dielectric constant (9.8). The XRD measurement indicates that the ZnO layer has high crystal quality. The field effect mobility and the on/off current ratio of the device is 2.69cm^2V^-1s^-1 and - 1 × 10^4, respectively. 相似文献
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大多数OLED都用ITO做阳极,为了提高ITO的功函数、改善ITO表面的平整度和减少C的污染,通常要在生长有机材料前对ITO表面进行处理。介绍了目前用等离子体对OLED阳极进行处理的研究现状,给出了Ar、O2、H2、N2、N2O和CF4等离子体处理ITO后对平整度、功函数、接触角和OLED特性等的影响,在他人研究基础上得出结论:用等离子体对OLED阳极进行处理其器件特性不仅与处理ITO表面的气体种类有关,也与产生等离子体的条件有关。采用正交试验方法可优化等离子体处理工艺参数,获得高性能的OLED。 相似文献
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A Novel GaAs/InGaAs/AlGaAs Structure of Modulation—Doped Field—Effect Transistors with High Transconductances
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Novel structure GaAs/InGaAs/AlGaAs pseudomorphic modulation-doped field-effect transistors (MODFETs) with a buried p-i-n dipole layer and a 200 nm buffer layer have been fabricated.According to the calculation,the dipole buried layer not only results in the very thin buffer layer required,but also enhances the density of two-dimensional electron gas.The measured transconductances of these MODFETs,with a gate length of 2μm and a drain-source spacing of 5μm,are as high as 320mS/mm and the measured maximum drain currents of the typical devices are higher than 500mA/mm. 相似文献