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本文利用俄歇电子谱(AES)、X射线衍射(XRD)和电学测量等方法研究了原位掺杂多晶硅/CoSi_2/Si_(衬底)多层结构在700—900℃的温度范围内在惰性气体和真空中进行热处理的稳定性.结果表明,当退火温度低于 850℃,这种结构有良好的热稳定性.当温度高于 850℃,多晶硅与硅化物间将发生互扩散和界面反应.随着退火温度升高,在惰性气体的气氛中,CoSi_2迁移到表面层,而硅外延生长在硅衬底上,形成 CoSi_2/Si 双层结构;在真空中热处理仍可保持 poly-Si/CoSi_2/Si 三层结构. 相似文献
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The crystallization of the amorphous Cu60Zr40 alloy has been studied by differential scanning calorimetry (DSC), scanning Auger microprobe (SAM) and transmission electron microscopy (TEM). The DSC trace showed that the sample exhibited a glass transition at 750 K and a strong exothermic effect beginning from 782 K. An enrichment of the element Zr and significant oxygen contamination in a zone near the surface to a depth of about 10 nm were revealed by SAM in the analysis of surface competition and depth profiles of the Cu60Zr40 sample. Also, the change of concentration ratio of Ca to Zr in amorphous matrix at the clean Cu60Zr40 surface as a function of annealing temperature was examined in detail, and it was found that the concentration of Zr at the surface is slightly higher than that in the bulk until 780K and that the concentration ratio of Cu to Zr in matrix has an abrupt increase in the temperature range of 780-800K. The observations by high resolution TEM revealed the appearance of cluster-like regions of approximately 1.5-2.0 nm in size just before crystallization and they distributed randomly throughout the sample. This phenomenon is analogous to the results obtained using field ion microscopy (FIM) by the present authors. The microstructural changes of the sample daring heating show the gradual crystallization of the amorphous matrix. 相似文献
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InP(100) surface treated with (NH4)2Sx has been investigated by using photolumines-cence(PL), Auger electron spectroscopy and X-ray photoelectron spectroscopy, It is found that PL intensity increased by a factor of 3.3 after (NH4)2Sx passivation and the sulfur remained on the surface only bonded to indium, not to phosphorus. This suggests that the sulfur atoms replace the phosphorus atoms on the surface and occupy the phosphorus vacancies. 相似文献
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The crystallization of the amorphous Cu60Zr40 alloy has been studied by differential scanning calorimetry (DSC), scanning Auger microprobe (SAM) and transmission electron microscopy (TEM). The DSC trace showed that the sample exhibited a glass transition at 750 K and a strong exothermic effect beginning from 782 K. An enrichment of the element Zr and significant oxygen contamination in a zone near the surface to a depth of about 10 nm were revealed by SAM in the analysis of surface competition and depth profiles of the Cu60Zr40 sample. Also, the change of concentration ratio of Ca to Zr in amorphous matrix at the clean Cu60Zr40 surface as a function of annealing temperature was examined in detail, and it was found that the concentration of Zr at the surface is slightly higher than that in the bulk until 780K and that the concentration ratio of Cu to Zr in matrix has an abrupt increase in the temperature range of 780-800K. The observations by high resolution TEM revealed the appearance of cluster-like regions of approximately 1.5-2.0 nm in size just before crystallization and they distributed randomly throughout the sample. This phenomenon is analogous to the results obtained using field ion microscopy (FIM) by the present authors. The microstructural changes of the sample daring heating show the gradual crystallization of the amorphous matrix. 相似文献
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