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文章对CableModem中使用的调制解调技术作了详细的介绍和分析 ,并给出了其在有关产品中的应用。最后对CableModem的发展前景做了分析和预测。 相似文献
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基于计算机视觉的航天器间相对状态测量系统 总被引:10,自引:1,他引:9
在航天器编队飞行应用中,航天器间相对状态(相对位置和姿态)的确定是实现航天器自主控制的重要条件。通过充分利用计算机视觉理论及相机成像原理,提出了一种基于计算机视觉的航天器间相对状态的测量系统。推导了基于目标靶特征点确定航天器相对状态的四元数法,介绍了系统的测试原理及标定方法,并通过采用APSCMOS相机作为图像传感器,建立了它的试验原型,验证了测量原理和算法的正确性。该测量系统结构简单、体积小、重量轻、功耗低、算法简单、速度快,近距离测量精度高,能够广泛地应用于空间合作目标间相对状态的测量。 相似文献
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Thermoelastic Stress Field Investigation of GaN Material for Laser Lift-off Technique based on Finite Element Method 下载免费PDF全文
The transient thermoelastic stress fields of GaN films is analyzed by the finite element method for the laser lift-off (LLO) technique. Stress distributions in GaN films irradiated by pulse laser with different energy densities as functions of time and depth are simulated. The results show that the high thermoelastic stress distributions in GaN films localize within about 1 μm below the GaN/Al2O3 interface using proper laser parameters. It is also found that GaN films can avoid the thermal deformation because the maximum thermoelastic stress 4.28 GPa is much smaller than the yield strength of GaN 15GPa. The effects of laser beam dimension and the thickness of GaN films on stress distribution are also analyzed. The variation range of laser beam dimension as a function of the thickness of GaN films is simulated to keep the GaN films free of thermal deformation. LLO experiments are also carried out. GaN-based light-emitting diodes (LEDs) are separated from sapphire substrates using the parameters obtained from the simulation. Compared with devices before LLO, P-I-V measurements of GaN- based LEDs after LLO show that the electrical and optical characteristics improve greatly, indicating that no stress damage is brought to GaN films using proper parameters obtained by calculation during LLO. 相似文献
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脉冲激光探测的最大探测距离与发射信号功率有关,根据系统发射端瞬时功率的形式,通过计算得出了脉冲激光平均发射功率和最大瞬时功率分别与驱动电流的脉冲上升沿时间、脉冲宽度、脉冲重复周期的关系.结合传输衰减、弱信号检测和信号预处理过程中的信号功率变化,得出了最大探测距离与激励电流波形参数、光电探测器参数、信号预处理电路噪声、信... 相似文献
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激光剥离技术实现垂直结构GaN基LED 总被引:3,自引:0,他引:3
为改善GaN基发光二极管(Light-emitting diode,LED)的电学特性和提高其输出光功率,采用激光剥离技术,在KrF准分子激光器脉冲激光能量密度为400mJ/cm2的条件下,将GaN基LED从蓝宝石衬底剥离,结合金属熔融键合技术,在300℃中将GaN基LED转移至高电导率和高热导率的硅衬底,制备出了具有垂直结构的GaN基LED,并对其电学和光学特性进行了测试。结果表明:在110mA注入电流下,垂直结构器件的开启电压由普通结构的3.68V降低到了3.27V;在560mA注入电流下,器件输出光功率没有出现饱和现象;采用高电导率和高热导率的硅衬底能有效地改善GaN基LED的电学和光学特性。 相似文献
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