排序方式: 共有6条查询结果,搜索用时 843 毫秒
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采用自行研制的CVD设备在m面蓝宝石衬底上成功生长了微米级的ZnO外延薄膜.采用X射线衍射(XRD)和双晶X射线摇摆曲线(DXRD)研究了所生长ZnO薄膜的结构特征.利用扫描电子显微镜(SEM)观测了ZnO样品的截面,并测得其厚度.同时利用室温光致发光(PL)谱及霍尔(Hall)测试研究了ZnO外延薄膜的光学性质和电学性质. 相似文献
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采用化学气相沉积(CVD)方法在Si(001)衬底上分别制备了有金属Au缓冲层以及无Au缓冲层的ZnO薄膜。其中Au缓冲层在物理气相沉积(PVD)设备中蒸发,厚度大约为300nm。有Au缓冲层的ZnO薄膜晶体质量比直接在Si衬底上生长有了显著提高。利用X射线衍射(XRD)研究了所生长ZnO薄膜的结晶质量,有Au缓冲层的ZnO薄膜虽然仍为多晶,但显示出明显的择优取向。用光学显微镜研究了ZnO薄膜的表面特征,金属Au缓冲层显著地提高了在Si衬底上生长的ZnO薄膜的晶粒尺寸及平整度。同时利用室温光致发光(PL)谱研究了ZnO薄膜的光学性质,并分析了有Au缓冲层的ZnO薄膜NEB发光峰强度反而弱的可能原因。 相似文献
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A 5.35-μm-thick ZnO film is grown by chemical vapour deposition technique on a sapphire (0001) substrate with a GaN buffer layer. The surface of the ZnO film is smooth and shows many hexagonal features. The full width at half maximum of ZnO (0002) u-rocking curve is 161 arcsec, corresponding to a high crystal quality of the ZnO film. From the result of x-ray diffraction 0 - 20 scanning, the stress status in ZnO film is tensile, which is supported by Raman scattering measurement. The reason of the tensile stress in the ZnO film is analysed in detail. The lattice mismatch and thermal mismatch are excluded and the reason is attributed to the coalescence of grains or islands during the growth of the ZnO film. 相似文献
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