激光定位深亚微米CMOS SRAM单粒子翻转敏感区

The pulsed laser facility for SEU sensitivity mapping is utilized to study the SEU sensitive regions of a 0.18/zm CMOS SRAM cell. Combined with the device layout micrograph, SEU sensitivity maps of the SRAM cell are obtained. TCAD simulation work is performed to examine the SEU sensitivity characteristics of the SRAM cell. The laser mapping experiment results are discussed and compared with the electron micrograph information of the SRAM cell and the TCAD simulation results. The results present that the test technique is reliable and of high mapping precision for the deep submicron technology device.     

不同工艺尺寸CMOS器件单粒子闩锁效应及其防护方法

基于建立的不同工艺尺寸的CMOS器件模型,利用TCAD器件模拟的方法,针对不同工艺CMOS器件,开展了不同工艺尺寸CMOS器件单粒子闩锁效应(SEL)的研究。研究表明,器件工艺尺寸越大,SEL效应越敏感。结合单粒子闩锁效应触发机制,提出了保护带、保护环两种器件级抗SEL加固设计方法,并通过TCAD仿真和重离子试验验证防护效果,得出最优的加固防护设计。结果表明,90nm和0.13μm CMOS器件尽量选用保护带抗SEL结构,0.18μm或更大工艺尺寸CMOS器件建议选取保护环抗SEL结构。     

硅通孔互连技术的开发与应用

随着三维叠层封装、MEMS封装、垂直集成传感器阵列以及台面MOS功率器件倒装焊技术的开发,硅通孔互连技术正在受到越来越广泛的重视和研究。文中叙述了几种硅通孔互连技术的制造方法,以及它们在三维封装、MEMS封装、高密度硅基板、垂直集成传感器阵列和台面MOS功率器件等方面的应用。最后,进一步阐述了硅通孔互连中几项关键技术的研究现状以及存在的挑战。     

基于激光背部辐照方法的小尺寸器件的单粒子效应特性

本文基于脉冲激光背部辐照试验方法,测试了小尺寸器件的单粒子翻转与闩锁特性,以克服高集成度器件日益增加的金属布线层对激光试验的影响。研究了SRAM器件存储的数据类型对器件单粒子翻转阈值与截面的影响特性。试验测试了深亚微米器件微闩锁效应的电流变化特征。建立了一种激光能量与重离子LET值对应关系的经验公式,用于评估小尺寸器件的等效激光LET值。此外,利用激光背部辐照试验方法,初步试验研究了90nmSOI工艺PowerPC微处理器的单粒子翻转特性。     

A single-event transient induced by a pulsed laser in a silicon-germanium heterojunction bipolar transistor

A study on the single event transient (SET) induced by a pulsed laser in a silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) is presented in this work. The impacts of laser energy and collector load resistance on the SET are investigated in detail. The waveform, amplitude, and width of the SET pulse as well as collected charge are used to characterize the SET response. The experimental results are discussed in detail and it is demonstrated that the laser energy and load resistance significantly affect the SET in the SiGe HBT. Furthermore, the underlying physical mechanisms are analyzed and investigated, and a near-ideal exponential model is proposed for the first time to describe the discharge of laser-induced electrons via collector resistance to collector supply when both base-collector and collector-substrate junctions are reverse biased or weakly forward biased. Besides, it is found that an additional multi-path discharge would play an important role in the SET once the base-collector and collector-substrate junctions get strongly forward biased due to a strong transient step charge by the laser pulse.     

90nm互补金属氧化物半导体静态随机存储器局部单粒子闩锁传播效应诱发多位翻转的机理

基于单粒子效应脉冲激光实验装置,开展了90 nm互补金属氧化物半导体静态随机存储器的单粒子翻转和闩锁效应实验,并给出了器件单粒子翻转效应位图.实验发现,器件出现了大量的多位翻转和约20 mA的电源电流脉冲.借助器件仿真工具,揭示了器件发生单粒子多位翻转效应的原因.结果表明,器件局部阵列发生单粒子闩锁效应并传播到多个位单元是诱发多位翻转的主要原因.通过对比分析脉冲激光和器件仿真实验结果,发现P/N阱电势塌陷是导致90 nm互补金属氧化物半导体静态随机存储器出现单粒子闩锁传播效应的内在物理机制.     

一种低成本的硅垂直互连技术

采用KOH刻蚀工艺制作硅垂直互连用通孔,淀积SiO2作为硅垂直互连的电绝缘层,溅射Ti和Cu分别作为Cu互连线的黏附层/扩散阻挡层和电镀种子层.电镀10μm厚的Cu作为硅垂直互连的导电层.为实现金属布线的图形化,在已有垂直互连的硅片上试验了干膜光刻工艺.采用化学镀工艺,在Cu互连线上沉积150～200 nm厚的NiMoP薄膜作为防止Cu腐蚀和Cu向其上层介质扩散的覆盖层.高温退火验证了Ti阻挡层和NiMoP覆盖层的可靠性.     

脉冲激光试验评估模拟电路单粒子效应

利用脉冲激光对典型模拟电路的单粒子效应进行了试验评估及加固技术试验验证,研究2种不同工艺的运算放大器的单粒子瞬态脉冲(SET)效应,在特定工作条件下两者SET脉冲特征规律及响应阈值分别为79.4 pJ和115.4 pJ,分析了SET脉冲产生和传播特征及对后续数字电路和电源模块系统电路的影响。针对SET效应对系统电路的危害性,设置了合理的滤波电路来完成系统电路级加固,并通过了相关故障注入试验验证,取得了较好的加固效果。     

Comparative research on “high currents” induced by single event latch-up and transient-induced latch-up

By using the pulsed laser single event effect facility and electro-static discharge(ESD) test system, the characteristics of the "high current", relation with external stimulus and relevance to impacted modes of single event latch-up(SEL)and transient-induced latch-up(TLU) are studied, respectively, for a 12-bit complementary metal–oxide semiconductor(CMOS) analog-to-digital converter. Furthermore, the sameness and difference in physical mechanism between "high current" induced by SEL and that by TLU are disclosed in this paper. The results show that the minority carrier diffusion in the PNPN structure of the CMOS device which initiates the active parasitic NPN and PNP transistors is the common reason for the "high current" induced by SEL and for that by TLU. However, for SEL, the minority carrier diffusion is induced by the ionizing radiation, and an underdamped sinusoidal voltage on the supply node(the ground node) is the cause of the minority carrier diffusion for TLU.     

用于城市轨道交通的视频光传输系统

介绍一种无压缩的视频光传输系统,采用频分复用多路(FDM)方式进行调试.重点介绍了系统的可扩展性能实现和集中的网络管理设计.工程实践证明,该系统具有可靠性高、管理方便、易于、展等优点,且在轨道交通系统中运行稳定.