垂直纳米线晶体管的制备技术

对目前垂直纳米线晶体管的制备技术进行了综述.首先根据器件结构取向介绍了纳米线晶体管的分类,即水平纳米线晶体管和垂直纳米线晶体管,比较了这两类不同结构晶体管的优缺点,阐述了垂直纳米线晶体管的优势及其潜在应用价值.重点介绍了两种主流的垂直纳米线晶体管的制造方法,即自下而上方法和自上而下方法,自上而下方法则又分为后栅工艺和先栅工艺.随后详细比较了它们之间的不同.最后,对垂直纳米线晶体管制造过程中的工艺挑战进行了分析,提出了几种可行的解决方案,并预测了垂直纳米线晶体管未来的发展趋势,特别是在低功耗器件及3D存储器等方面的发展走向.     

Improvement of Operation Characteristics for MONOS Charge Trapping Flash Memory with SiGe Buried Channel

We propose and investigate a novel metal/SiO_2/Si_3N_4/SiO_2/SiGe charge trapping flash memory structure(named as MONOS), utilizing Si Ge as the buried channel. The fabricated memory device demonstrates excellent programerasable characteristics attributed to the fact that more carriers are generated by the smaller bandgap of Si Ge during program/erase operations. A flat-band voltage shift 2.8 V can be obtained by programming at +11 V for 100 us. Meanwhile, the memory device exhibits a large memory window of ~7.17 V under ±12 V sweeping voltage, and a negligible charge loss of 18% after 104 s' retention. In addition, the leakage current density is lower than 2.52 × 10~(-7) A·cm~(-2) below a gate breakdown voltage of 12.5 V. Investigation of leakage current-voltage indicates that the Schottky emission is the predominant conduction mechanisms for leakage current. These desirable characteristics are ascribed to the higher trap density of the Si_3N_4 charge trapping layer and the better quality of the interface between the SiO_2 tunneling layer and the Si Ge buried channel. Therefore, the application of the Si Ge buried channel is very promising to construct 3 D charge trapping NAND flash devices with improved operation characteristics.     

一类边界条件中带有扰动参数的积分边值问题正解的存在性

本文研究边界条件中带有扰动参数的积分边值问题正解的存在性与不存在性及扰动参数对正解存在性的影响.利用不动点指数理论,得出边值问题至少有一个正解、两个正解以及无解的充分条件.     

Synthesis,Structure and Decarboxylative Behavior of a Nitro-coordinated Potassium Compound

A novel nitro-coordinated potassium compound [K(Htdc)(H_2O)]_n(tdc = 3-nitro-thiophene-2,5-dicarboxylate), has been synthesized and characterized. The complex with a two-dimensional(2D) layer structure contains an infinite K-O ladder-shaped chain, which is connected through carboxyl and unusual nitro-coordination of Htdc– anion. Then the 2D layers are further extended by intermolecular hydrogen-bonding to form a three-dimensional(3D) supramoleculalr network. Variable temperature powder X-ray diffractions, thermogravimetric analysis and nuclear magnetic resonance studies exhibit that the compound has a thermal-induced decarboxylative behavior.