A modern approach to the solution and analysis of the Simha-Somcynsky model for the description of pressure-volume-temperature properties of polymer fluids

We revisit the Simha-Somcynsky model of polymer fluids with the purpose of developing novel theoretical and computational approaches to simplify and speed up its solution as well as the fitting of experimental data, and decrease its level of mathematical complexity. We report a novel method that allows us to solve one of the two equations of the model exactly, thus putting the level of mathematical difficulty on a par with the one of other models for polymer fluids. Moreover, we describe a computational algorithm capable of fitting all five parameters of the model in an unbiased way. The results obtained reproduce literature results and fit experimental pressure-volume-temperature and solubility parameter data for three polymers very accurately. Moreover, the new techniques allow for the investigation of the model at very low temperatures. Unexpectedly, the model predicts behaviors that could be interpreted as a glass transition, as routinely observed in dilatometry and differential scanning calorimetry, and a glass phase. We compared the predicted and experimental T g’s for cis poly(1,4-butadiene) and found an excellent quantitative agreement.     

High Power Fiber Bundle Array Coupled LDA Module

1 Introduction High power laser diode arrays (LDA) have many advan- tages such as small volume, long working life, high slope efficiency and high optical density, so they have many applications in medical treatment, material pro- cessing, and for the pumping source of solid laser and etc. But unfortunately, the LDA can not be easy to use directly in these fields because of their poor beam quality and extremely asymmetric divergent beams (!x≈ 5°～10°and !y≈20°～35°, for example), so it …     

关于广义分数次积分的合成

Compositions of generalized fractional integral operators involving Gauss hy-pergeometric function with power weights are studied. Composition formulas for such integrals which are the operators of the same type are obtained. In parti-cular, compositions of two identical operators are given.     

超大规模集成电路中任意形状掩模边缘附近的离子分布

离子注入过程中,注入离子在掩模边缘附近的分布决定MOS晶体管漏极区域处的电场强度,计算了70keV硼离子注入硅样品中不同掩模边缘离子密度等线,考虑了四阶矩下的杂质深度分布(无掩模情况)。合理选择掩模蚀刻工艺,可获得均匀性,高抗噪声度的器件中。同时也指出了太薄掩模材料对注入离子分布的影响。