Vertical and Smooth, etching of InP by Cl2／CH4／Ar Inductively Coupled Plasma at Room Temperature

We study the room-temperature dry, etching of InP by inductively coupled plasma (ICP) using C12/CH4/Ar mixtures. Etches were characterized in terms of anisotropy and surface roughness by scanning electron microscopy and atomic force microscopy, respectively. It is found that the flow ratio between C12 and Ctt4, ICP power, rf chuck power, and table temperature can greatly influence the, etching results. By adjusting, etching parameters,vertical sidewall and smooth surface can be obtained simultaneously, together with a moderate, etch rate and a good select ratio. The root-mean-square surface roughness is measured to be as low as 0.27nm. To the best of our knowledge, this is the best result for InP to date. The, etch rate is 855nm/min, and the selectivity ratio overSi02 is estimated to be higher than 15:1. The stoichiometry of the, etched surface has also been investigated by Auger electron spectroscopy. The, etched surface is found to manifest a slight P deficiency, and the ratio between P and In reaches the stoichiometric value within about 0.75nm depth into the surface.     

利用光聚合反应制作表面平整的聚合物光栅

提出利用紫外光聚合反应来制作聚合物光栅的方法．实验发现,光栅的表面起伏深度很小,约为12.4～0.7nm;折射率调制较大,达到0.010左右．这种方法在低阶分布反馈聚合物激光器的制作中具有很好的应用前景．     

利用光聚合反应制作表面平整的聚合物光栅

提出利用紫外光聚合反应来制作聚合物光栅的方法.实验发现,光栅的表面起伏深度很小,约为12.4～0.7nm;折射率调制较大,达到0.010左右.这种方法在低阶分布反馈聚合物激光器的制作中具有很好的应用前景.