通过费米能区重离子碰撞产额分布来研究16O原子核的团簇结构

近几年来,原子核核内的α团簇结构引起了人们的广泛关注.本工作的目的是讨论在费米能区下重离子碰撞的碎片产额分布是否可以作为研究轻核中α团簇结构的工具.本文基于扩展的量子分子动力学输运模型(EMQD)模拟了16O具有4种不同的初始化α构型(长链型、风筝型、四方型以及正四面体型)的16O+16O反应,通过观察碎片产额多重数分...     

Compound buried layer SOI high voltage device with a step buried oxide

A silicon-on-insulator (SOI) high performance lateral double-diffusion metal oxide semiconductor (LDMOS) on a compound buried layer (CBL) with a step buried oxide (SBO CBL SOI) is proposed.The step buried oxide locates holes in the top interface of the upper buried oxide (UBO) layer.Furthermore,holes with high density are collected in the interface between the polysilicon layer and the lower buried oxide (LBO) layer.Consequently,the electric fields in both the thin LBO and the thick UBO are enhanced by these holes,leading to an improved breakdown voltage.The breakdown voltage of the SBO CBL SOI LDMOS increases to 847 V from the 477 V of a conventional SOI with the same thicknesses of SOI layer and the buried oxide layer.Moreover,SBO CBL SOI can also reduce the self-heating effect.     

有机小分子掺杂的聚合物发光二极管电致发光及其发射机制

在新型空穴传输聚合物聚TPD(PTPD)中掺杂电子传输有机小分子荧光染料Rubrene制成薄膜器件.考察了影响聚合物掺杂小分子薄膜器件发光性能的因素.实验表明,通过在器件中掺杂,可以控制器件所发光的颜色.研究了PTPD掺杂Rubrene分子薄膜的电致发光光谱和光致发光光谱.由实验可知.在光致发光中存在从PTPD向Rubrene的能量传递和电荷转移,而电致发光则存在从PTPD向Rubrene的能量传递和Rubrene分子对载流子的俘获.即掺杂器件的发射机制为载流子陷阱和Forster能量转换过程的共同作用.     

广播电台音频网的安装和维护

随着数字音频技术与计算机网络技术的成熟与发展,电台原有模式与技术架构正在发生变化,许多电台都采用了音频网络系统。通州电视台于2006年安装了音频网络系统,目前系统运行稳定,下面就音频网的安装和维护谈点心得。     

超音速激光沉积技术:研究现状及发展趋势

超音速激光沉积(SLD)是新近发展起来的一种激光复合制造技术,该技术将激光辐照与冷喷涂相结合,利用高能激光束的热能与高速粒子动能的协同作用,实现了宽范围材料的沉积,并获得了特殊的微观组织和性能。结合本课题组在SLD领域的研究成果,从SLD原理、沉积材料范围、微观组织结构以及性能表征等方面综述了国内外的最新研究进展,从工艺探索、设备开发以及性能评估等方面对SLD技术未来的发展趋势和挑战进行了展望。     

在椭圆教学中体现数学文化的几个案例

案例背景《普通高中数学课程标准》（实验）指出,数学是人类文化的重要组成部分．数学教学应当反映数学的历史、应用和发展趋势,数学对推动社会发展的作用,以及数学的社会需求,社会发展对数学自身的促进作用,数学的思想体系在人类文明史中的地位和作用,让学生了解数学的应用价值和人文价值．教师在教学中应结合有关内容有意识地强调数学的科学价值、文化价值、美学价值．在这个大背景下,我校数学组承担了市级教育规划课题：《文化视野下的高中数学教学探索》．本文记录了在椭圆教学中体现数学文化的几个案例．     

超声波提取-气相色谱法测定土壤中21种酚类化合物

建立了超声波提取-气相色谱法同时测定土壤中21种酚类化合物的分析方法。用二氯甲烷和正己烷混合溶剂提取土壤中的酚类化合物,提取液经碱性水溶液分配净化,去除非酸性有机杂质,再酸化萃取酚类化合物,浓缩后采用气相色谱-氢火焰离子化检测器进行检测,外标法定量。以10 g土壤样品计,酚类化合物的检出限为0.01~0.06 mg/kg。实际样品添加回收试验的回收率为62.9%~111.4%,相对标准偏差为4.3%~24.0%(n=6),准确度和精密度均较好。结果表明:该法操作方便,净化效果好,可用于土壤中多种酚类化合物的测定。     

Partial-SOI high voltage P-channel LDMOS with interface accumulation holes

A new partial SOI (silion-on-insulator) (PSOI) high voltage P-channel LDMOS (lateral double-diffused metal-oxide semiconductor) with an interface hole islands (HI) layer is proposed and its breakdown characteristics are investigated theoretically. A high concentration of charges accumulate on the interface, whose density changes with the negative drain voltage, which increase the electric field (E_I) in the dielectric buried oxide layer (BOX) and modulate the electric field in drift region . This results in the enhancement of the breakdown voltage (BV). The values of E_I and BV of an HI PSOI with a 2-μm thick SOI layer over a 1-μm thick buried layer are 580V/μm and -582 V, respectively, compared with 81.5 V/μm and -123 V of a conventional PSOI. Furthermore, the Si window also alleviates the self-heating effect (SHE). Moreover, in comparison with the conventional device, the proposed device exhibits low on-resistance.     

Improvement on the breakdown voltage for silicon-on-insulator devices based on epitaxy-separation by implantation oxygen by a partial buried n~+-layer

A novel silicon-on-insulator (SOI) high-voltage device based on epitaxy-separation by implantation oxygen (SIMOX) with a partial buried n +-layer silicon-on-insulator (PBN SOI) is proposed in this paper.Based on the proposed expressions of the vertical interface electric field,the high concentration interface charges which are accumulated on the interface between top silicon layer and buried oxide layer (BOX) effectively enhance the electric field of the BOX (E_I),resulting in a high breakdown voltage (BV) for the device.For the same thicknesses of top silicon layer (10 μm) and BOX (0.375 μm),the E I and BV of PBN SOI are improved by 186.5% and 45.4% in comparison with those of the conventional SOI,respectively.