A MOCVD-Growth Multi-Wavelength Laser Monolithically Integrated on InP

We present an arrayed waveguide grating multi-wavelength laser （MWL）. The device is operated with five wave- length channels of 194 GHz spacing around a central wavelength of 1.57μm. A side mode suppression ratio of better than 35 dB for all channels is demonstrated. A very attractive feature of the MWL is that it has been realized by a novel one step regrowth approach to achieve a high quality active and passive interface.     

Broadband chirped InAs quantum-dot superluminescent diodes with a small spectral dip of 0.2 dB

We report on the fabrication and characterization of InAs/GaAs chirped multilayer quantum-dot superluminescent diodes (CMQD-SLDs) with and without direct Si doping in QDs. It was found that both the output power and the spectral width of the CMQD-SLDs were significantly enhanced by direct Si doping in the QDs. The output power and spectral width have been increased by approximately 18.3% and 40%, respectively. Moreover, we shortened the cavity length of the doped CMQD-SLD and obtained a spectral width of 106 nm. In addition, the maximum output power and spectral width of the CMQD-SLD doped directly with Si can be further increased to 16.6 mW and 114 nm, respectively, through anti-reflection coating and device packaging. The device exhibited the smallest spectral dip of 0.2 dB when the spectrum was widest. The improved performances of the doped CMQD-SLD can be attributed to the direct doping of Si in the QDs, optimization of device structure and device packaging.     

High Power 1060 nm Distributed Feedback Semiconductor Laser

A GaAs based high power distributed feedback （DFB） semiconductor laser with a second-order grating has been demonstrated. An output power of 150row at an injection current of 350mA is realized with a 1-mm cavity length. With a new design of the waveguide structure, the DFB laser maintains a stable single longitudinal mode around 106Ohm with a side mode suppression ratio of larger than 50dB.     

1.3-μm 1 × 4 MMI coupler based on shallow-etched InP ridge waveguides

1.3-μm 1 × 4 MM1 coupler is designed and fabricated on an InP substrate based on a shallow etched waveguide structure. Tapered input/output waveguides and a bending waveguide design are adopted and applied in the device to optimize the performance. The average excess losses of the 1 × 4 MMI coupler per channel are 2.8, 1.7, 2.9, and 2.9 dB, respectively. The smallest excess loss can be lower than 0.5 dB in the 40-nm spectrum bandwidth. The average uniformity between the four channels of the MMI coupler is 1.3 dB, while the smallest uniformity is only 0.4 dB.     

大功率1060nm双沟脊波导分布反馈激光器

研制了双沟型脊波导结构的1 060 nm分布反馈激光器.和普通脊波导激光器相比,该器件能提高在连续条件下的侧模稳定性.单模最大输出功率达到300 mW边模抑制比大于45 dB.采用该激光器进行泵浦周期性极化铌酸锂晶体倍频实验,得到的绿光功率为3 mW,该方案将成为低成本绿光光源实现方案.     

1.55-μm InGaAsP/InP基大功率半导体激光器的优化与制作

本文对1.55-μm InGaAsP/InP基大功率宽接触激光器进行了系统的设计优化,目的在于减小内部损耗的同时增大内量子效率,最终实现大功率输出。制作并深入分析了四种不同波导结构的宽接触激光器。通过理论分析和实验验证,表明梯度波导和薄的上波导限制层结构会产生高的内量子效率和输出斜率。最终1mm腔长,50μm条宽的未镀膜宽接触激光器获得了160mW的单边输出功率。