PIN二极管变温度高频动态建模方法

The PIN diode model for high frequency dynamic transient characteristic simulation is important in conducted EMI analysis. The model should take junction temperature into consideration since equipment usually works at a wide range of temperature. In this paper, a temperature-variable high frequency dynamic model for the PIN diode is built, which is based on the Laplace-transform analytical model at constant temperature. The relationship between model parameters and temperature is expressed as temperature functions by analyzing the physical principle of these parameters. A fast recovery power diode MUR1560 is chosen as the test sample and its dynamic performance is tested under inductive load by a temperature chamber experiment, which is used for model parameter extraction and model verification. Results show that the model proposed in this paper is accurate for reverse recovery simulation with relatively small errors at the temperature range from 25 to 120 ℃.     

多合一电驱系统电磁干扰预测模型研究

针对多合一电驱系统的电磁干扰传导发射问题,采用分模块的精确建模方式建立了完整的多合一电驱系统传导发射风险预测及干扰抑制一体化仿真模型.在此模型基础上,研究了滤波电路Y电容的寄生参数、薄膜电容的寄生参数以及IGBT与散热器之间的寄生参数对系统的影响,对比分析了仿真与测试的传导发射干扰电压频域数据.结果证明,电驱系统风险预测及干扰抑制一体化模型仿真与实测结果高度吻合,可以准确预测电驱系统电磁干扰风险.