化学机械抛光工艺中的硅片背压力控制与优化

化学机械抛光（Chemical Mechanical Polishing,CMP）技术是最有效的晶圆全局平坦化技术,抛光头是CMP设备中最核心的部件之一,新一代抛光头的设计主要采用区域压力控制技术。硅片抛光质量不仅取决于抛光液,还取决于对硅片抛光压力的精确控制。在CMP抛光工艺过程中各腔室的压力设定值通常并非一致,而且由于柔性弹性隔膜的存在各腔室之间相互耦合。由于耦合现象的存在使得多区腔室压力控制变得复杂化,针对这一耦合现象本文提出了一种用于多区解耦的控制方法,并基于该方法对多腔室进行了系统辨识以及控制参数整定,最后进行了多腔室同时加压实验,实验结果表明该解耦控制方法的可行性以及正确性。     

Wafer back pressure control and optimization in the CMP process

Chemical mechanical polishing(CMP) is the most effective wafer global planarization technology.The CMP polishing head is one of the most important components,and zone back pressure control technology is used to design a new generation of polishing head.The quality of polishing not only depends on slurry,but also depends on the precise control of polishing pressures.During the CMP polishing process,the set pressure of each chamber is usually not the same and the presence of a flexible elastic diaphragm causes coupling effects.Because of the coupling effects,the identification of multi-chambers and pressure controls becomes complicated.To solve the coupling problem,this paper presents a new method of multi-chamber decoupled control,and then system identification and control parameter tuning are carried out based on the method.Finally,experiments of multi-chambers inflated at the same time are performed.The experimental results show that the presented decoupling control method is feasible and correct.     

直线电机精密工作台运动控制器设计

为了提高精密工作台的轨迹跟踪精度和动态响应性能,基于辨识出的控制对象离散化模型,利用极点配置方法设计了精密工作台运动控制器的前馈环节和反馈环节,构成具有两自由度结构的精密工作台运动控制系统.通过实验,与PD＋加速度前馈的控制方式相比较,精密工作台静态定位误差提高了0.5 μm;当精密工作台以120 mm/s匀速运动时,轨迹跟踪精度提高了3 μm;定位建立时间缩短了10 ms.结果表明,采用极点配置方法设计的运动控制器具有较好的动态响应和轨迹跟踪性能.