一种应用于纳米尺度器件陷阱电荷表征的新型改进电荷泵方法

随着器件特征尺寸的缩小,热载流子带来的器件蜕化效应越来越严重。电荷泵方法可用于表征陷阱电荷的分布。但由于局部阈值电压窄峰的影响,传统电荷泵法在测试陷阱电荷分布时存在误差。本文提出了一种改进型电荷泵测试方法,可用于精确提取纳米尺度器件中陷阱电荷的横向分布。 本文采用0.12微米的SONOS器件来验证这一方法的有效性。通过编程控制,使SONOS器件形成大约50纳米的阈值电压窄峰。采用新方法测试得到的陷阱电荷分布与测试得到的阈值电压有较好的一致性。     

Novel multi-bit non-uniform channel charge trapping memory device with virtual-source NAND flash array

In order to overcome the bit-to-bit interference of the traditional multi-level NAND type device,this paper firstly proposes a novel multi-bit non-uniform channel charge trapping memory(NUC-CTM) device with virtual-source NAND-type array architecture,which can effectively restrain the second-bit effect(SBE) and provide 3-bit per cell capability.Owing to the n~- buffer region,the SBE induced threshold voltage window shift can be reduced to less than 400 mV and the minimum threshold voltage window between ...     

新型多位非均匀沟道电荷俘获型存储器及新型虚拟源端的NAND阵列结构

为了解决传统多位存储NAND型存储器中位与位互相干扰的问题,本文提出了一种新型的用于多位存储的非均匀沟道电荷俘获型存储器及新型NAND结构。该器件能够很好地抑制SBE效应从而提供3比特/单元的存储能力。由于n-缓冲区的存在,由SBE效应导致的阈值电压漂移能够减小到400mV,在3比特/单元的存储能力下最小阈值电压窗口可以达到750mV。本器件还引入了富硅氮氧化硅层最为电荷俘获层,从而很好地提高了器件的电荷保持特性。     

A novel modified charge pumping method for trapped charge characterization in nanometer-scale devices

A new modified method based on the charge pumping technique is proposed and adopted to extract the lateral profiles of oxide charges in an advanced MOSFET.A 0.12μm SONOS device with 50 nm threshold voltage peak is designed and utilized to demonstrate the proposed method.The trapped charge distribution with a narrow peak can be precisely characterized with this method,which shows good consistency with the measured threshold voltage.