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Tens of Cd0.9Zn0.1Te wafers from three ingots grown by the vertical Bridgman method (VBM) are characterized by infrared (IR) transmission. Four types of distinct IR transmission spectra are found for these wafers. Each of them corresponds to one kind of wafers with specified quaJities. At the same time, approximate mathematical relations exist between the wafer dislocation density and their IR transmissions at the wavenumber 4000cm^-1, as well as between the resistivity and the IR transmissions at the wavenumber 500cm^-1. The reasons of the above results are attempted to be given. 相似文献
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采用傅里叶变换红外光谱仪测试了性能各异的多个CdZnTe晶片的红外透过率.研究表明,红外透过率的大小可以定性反映CdZnTe晶片的性能:红外透过率越高的晶片,其成分偏离越小,位错密度越低,电阻率越高.根据红外透过率大小随着波数的变化,红外透过率图谱可以分为4种,每一种图谱对应着具有不同性能的CdZnTe晶片,从晶片对红外光的吸收机理出发,对实验结果进行了初步分析。 相似文献
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