“模拟电子技术基础”课程的立体化教材建设

本文介绍了我校"模拟电子技术基础"课程立体化教材建设的整体思路,探讨立体化教材的内涵和表现形式,论述了如何将教学改革成果和科研成果融入教材,妥善处理传统内容继承与现代内容引进的问题;建立具有示范和辐射作用的数字化教材资源,突出了电子技术的应用性和实践性,强化学生工程实践能力的培养。     

Study of preparation and adsorption properties of imidacloprid mesoporous surface molecularly imprinted polymerEI北大核心CSCD

Imidacloprid mesoporous surface molecularly imprinted polymer (MIP) was rapidly synthesized by one[1]step method, with imidacloprid as template molecule, methacrylic acid (MAA) as functional monomer, azodiisobutyronitrile (AIBN) as initiator and ethylene glycol dimethacrylate (EGDMA) as crosslinker. The characterization of MIP was completed by SEM, TEM, FT-IR, and nitrogen adsorption-desorption isotherms. The adsorption conditions were optimized. At the imidacloprid concentration of 100 µg/mL, MIP reached adsorption saturation and the adsorption time was shorter than that of the corresponding non-imprinted polymer (NIP), with the saturated adsorption value of 3.628 mg/g, and the imprinting factor of 1.27, indicating that the mesoporous structure and surface imprinting improved the mass transfer rate of imidacloprid in the adsorption process, so as to improving the adsorption capacity. In addition, under the same conditions, the adsorption capacity of MIP for imidacloprid was higher than acetamiprid, thiacloprid and thiamethoxam, indicating that MIP had better specific recognition ability. The imidacloprid mesoporous surface MIP can be prepared simply and rapidly, which may be a potential material in the field of sample pretreatment and rapid detection. © 2023, Youke Publishing Co.,Ltd. All rights reserved.     

Lattice damage in InGaN induced by swift heavy ion irradiation

The microstructural responses of In_0.32Ga_0.68N and In_0.9Ga_0.1N films to 2.25 GeV Xe ion irradiation have been investigated using x-ray diffraction, Raman scattering, ion channeling and transmission electron microscopy. It was found that the In-rich In_0.9Ga_0.1N is more susceptible to irradiation than the Ga-rich In_0.32Ga_0.68N. Xe ion irradiation with a fluence of 7× 10¹¹ ions·cm^-2 leads to little damage in In_0.32Ga_0.68N but an obvious lattice expansion in In_0.9Ga_0.1N. The level of lattice disorder in In_0.9Ga_0.1N increases after irradiation, due to the huge electronic energy deposition of the incident Xe ions. However, no Xe ion tracks were observed to be formed, which is attributed to the very high velocity of 2.25 GeV Xe ions. Point defects and/or small defect clusters are probably the dominant defect type in Xe-irradiated In_0.9Ga_0.1N.     

激光真空传输通道及光学舱应力补偿技术

介绍了真空通道应力补偿结构的基本工作原理;研究了大温差环境下,激光束长距离真空传输通道的真空负压应力和热胀冷缩应力的自适应补偿技术和光学舱结构变形抑制技术;在整个光学系统上,开展了现场安装调试和真空负压应力考核,并进行环境温差变化情况下的光路传输稳定性试验验证。试验结果表明：解决了超长激光束真空传输通道在真空负压和大温差环境下的真空负压应力和热胀冷缩应力的自适应补偿问题和光学舱结构变形抑制问题;实现了传输通道真空负压应力自动平衡;消除了真空负压应力造成的光束漂移;实现了大温差环境下的真空负压通道结构热胀冷缩应力的自由释放;达到了光路长时间保持稳定的实际效果。     

新型二维SiO2结构及面内应变对其光电性质影响的第一性原理研究

SiO₂通常以三维晶体或无定形结构存在，限制了其在新技术如新一代集成电路中的应用，因此二维SiO₂的研究引起了越来越多的关注。本文通过删除三维层状CaAl₂Si₂O₈结构中的Ca和Al原子，直接构建出新的二维SiO₂构型。采用基于密度泛函理论的第一性原理计算，结构优化获得的新型2D SiO₂具有P-62m对称性，群号189。通过结合能、弹性系数、分子动力学模拟和声子谱计算，发现新型2D SiO₂具有高机械稳定性、热力学稳定性和动力学稳定性。电子性质和光学性质计算发现，2D SiO₂是带隙为6.08 eV绝缘体，且具有良好的光透射率和光导率。此外，通过研究面内双轴应变对2D SiO₂电子和光学性质的影响，发现2D SiO₂的带隙和介电函数受面内拉伸应变的影响较压缩应变略大，不过其整体光学性质受应变影响不大，保证了其在实际应用中电子性质和光学性质的稳定...