南方光伏项目EPC管理中的问题和建议

光伏项目施工基本采用设计采购施工(engineering procurement construction,EPC)总承包或小EPC方式(组件、逆变器、支架等主设备采购由业主负责),光伏EPC管理模式与传统建筑产业EPC管理模式有很大的不同,具有生命周期短、投资和技术含量高、涉及的专业领域多等特点,而南方光伏项目EPC管理由于涉及项目拟用土地租赁和前期可研报告不够深入等问题,存在较大管理风险和多重不同的风险因素,对风险管理方法也提出了新的要求。     

CVD金刚石薄膜金属化及其与金属的焊接研究

针对CVD金刚石在微波管中的应用特点,提出一种金刚石膜表面金属化新工艺。该工艺采用Ti/Mo/Ni体系和磁控溅射镀膜方法,与无氧铜焊接获得了良好的接合性能,封接件平均抗拉强度大于113.7 MPa。X射线衍射分析证实：经820℃真空热处理,金刚石与钛膜界面形成Ti8C5和TiO。     

Surface Polaritons in a Wire Medium with Spatial Dispersion

The dispersion relations of the surface polariton in a semi-infinite wire medium with spatial dispersion are analysed. In comparison with the traditional spatial dispersive medium there only exists one branch instead of multibranch for the dispersion curve. The possibility of the experimentally observing the surface polaritons by attenuated total reflection is simulated numerically.     

氮化铝陶瓷金属化技术的探讨

本文对目前常用的电子陶瓷(例如,氮化铝陶瓷、氧化铍陶瓷、氧化铝陶瓷)的性能和金属化技术进行了初步的比较,提出了氮化铝陶瓷要加强其应用研究,特别是要进一步提高其Mo-Mn法封接强度,论述了氧化铍陶瓷比氮化铝陶瓷DBC技术上的某些优势。     

氧化铝陶瓷封接强度的统计分析

采用Weibull分布和正态分布,对氧化铝陶瓷封接强度进行统计分析,并通过Weibull模数和变异系数来表征了材料强度的离散性。同时通过Weibull分布,比较了标准组合抗拉强度、拉钉强度和抗折强度测试的数据。     

The modulation effect of substrate doping on multi-node charge collection and single-event transient propagation in 90-nm bulk complementary metal-oxide semiconductor technology

Variation of substrate background doping will affect the charge collection of active and passive MOSFETs in complementary metal-oxide semiconductor (CMOS) technologies, which are significant for charge sharing, thus affecting the propagated single event transient pulsewidths in circuits. The trends of charge collected by the drain of a positive channel metal-oxide semiconductor (PMOS) and an N metal-oxide semiconductor (NMOS) are opposite as the substrate doping increases. The PMOS source will inject carriers after strike and the amount of charge injected will increase as the substrate doping increases, whereas the source of the NMOS will mainly collect carriers and the source of the NMOS can also inject electrons when the substrate doping is light enough. Additionally, it indicates that substrate doping mainly affects the bipolar amplification component of a single-event transient current, and has little effect on the drift and diffusion. The change in substrate doping has a much greater effect on PMOS than on NMOS.     

Parasitic bipolar amplification in a single event transient and its temperature dependence

Using three-dimensional technology computer-aided design (TCAD) simulation, parasitic bipolar amplification in a single event transient (SET) current of a single transistor and its temperature dependence are studied. We quantify the contributions of different current components in a SET current pulse, and it is found that the proportion of parasitic bipolar amplification in total collected charge is about 30% in both 130-nm and 90-nm technologies. The temperature dependence of parasitic bipolar amplification and the mechanism of the SET pulse are also investigated and quantified. The results show that the proportion of charge induced by parasitic bipolar increases with rising temperature, which illustrates that the parasitic bipolar amplification plays an important role in the charge collection of a single transistor.