金属氧化物半导体场效应管热载流子退化的1/fγ噪声相关性研究

研究了金属氧化物半导体(MOS)器件在高、中、低三种栅压应力下的热载流子退化效应及其1/fγ噪声特性.基于Si/SiO2界面缺陷氧化层陷阱和界面陷阱的形成理论,结合MOS器件1/f噪声产生机制,并用双声子发射模型模拟了栅氧化层缺陷波函数与器件沟道自由载流子波函数及其相互作用产生能级跃迁、交换载流子的具体过程.建立了热载流子效应、材料缺陷与电参量、噪声之间的统一物理模型.还提出了用噪声参数Sfγ表征高、中、低三种栅应力下金属氧化物半导体场效应管抗热载流子损伤能力的方法.根据热载流子对噪声影响的物理机制设计了实验并验证这个模型.实验结果与模型符合良好.     

磁场引起的近藤单态退相干机制

磁场作为一个环境能够诱导近藤单态的退相干。我们采用格林函数方法,计算磁场下量子点耦合Aharonov-Bohm环系统的退相干特性,数值结果显示磁场引起的近藤单态的退相干是一个突然的过程。     

DC应力n-MOSFET热载流子退化的1/f噪声特性

研究了DC应力n.MOSFET热载流子退化的Sfγ噪声参量.提出了用噪声参数和Sfγ表征高、中、低三种栅应力下n-MOSFET抗热载流子损伤能力的方法.进行了高、中、低三种栅压DC应力下热载流子退化实验.实验结果和本文模型符合较好.     

电子通过量子点输运的微分电导简

采用格林函数方法,计算了电子通过量子点输运的微分电导,计算结果显示电导与偏压关系曲线中出现一个狭窄的电导尖峰和一个展宽的电导峰,与实验观测一致,本文分析了两个电导峰出现的物理原因.     

A unified drain current 1/f noise model for GaN-based high electron mobility transistors

In this work, we present a theoretical and experimental study on the drain current 1/f noise in the AIGaN/GaN high electron mobility transistor （HEMT）. Based on both mobility fluctuation and carrier number fluctuation in a two- dimensional electron gas （2DEG） channel of AlGaN/GaN HEMT, a unified drain current 1/f noise model containing a piezoelectric polarization effect and hot carrier effect is built. The drain current 1/f noise induced by the piezoelectric polarization effect is distinguished from that induced by the hot carrier effect through experiments and simulations. The simulation results are in good agreement with the experimental results. Experiments show that after hot carrier injection, the drain current 1/f noise increases four orders of magnitude and the electrical parameter degradation Agm/gm reaches 54.9%. The drain current 1/f noise degradation induced by the piezoelectric effect reaches one order of magnitude; the electrical parameter degradation Agm/gm is 11.8%. This indicates that drain current 1/f noise of the GaN-based HEMT device is sensitive to the hot carrier effect and piezoelectric effect. This study provides a useful reliability characterization tool for the A1GaN/GaN HEMTs.     

金属氧化物半导体场效应管热载流子退化的1/fγ噪声相关性研究

研究了金属氧化物半导体(MOS)器件在高、中、低三种栅压应力下的热载流子退化效应及其1/f^γ噪声特性.基于Si/SiO₂界面缺陷氧化层陷阱和界面陷阱的形成理论,结合MOS器件1/f噪声产生机制,并用双声子发射模型模拟了栅氧化层缺陷波函数与器件沟道自由载流子波函数及其相互作用产生能级跃迁、交换载流子的具体过程.建立了热载流子效应、材料缺陷与电参量、噪声之间的统一物理模型.还提出了用噪声参数Sf ^{关键词： 金属氧化物半导体场效应管 热载流子 fγ噪声')" href="#">1/fγ噪声}     

DC应力n-MOSFET热载流子退化的1/f噪声特性

研究了DC应力n.MOSFET热载流子退化的Sfγ噪声参量.提出了用噪声参数和Sfγ表征高、中、低三种栅应力下n-MOSFET抗热载流子损伤能力的方法.进行了高、中、低三种栅压DC应力下热载流子退化实验.实验结果和本文模型符合较好.     

Correlation between dark current RTS noise and defects for AlGaInP multiple-quantum-well laser diode

推导了AlGaInP多量子阱LD器件暗电流RTS 噪声与缺陷相关性模型,实验结果表明暗电流RTS 噪声由有源区异质结界面载流子数涨落引起。根据相关性模型,确定了缺陷类型,定量确定了缺陷能级。分析了暗电流RTS 噪声功率谱密度的转角频率。实验结果和理论预测一致。本文结论提供一种确定AlGaInP多量子阱LD器件有源区深能级的有效方法。     

Correlation between dark current RTS noise and defects for AIGalnP multiple-quantum-well laser diode

The correlation model between dark current RTS noise and defects for A1GalnP multiple-quantum-well laser diode is derived. Experimental results show that dark current RTS noise caused carrier number fluctuations at the interface of the heterojunction in the active region. According to this correlation model, the defect types are determined, and the defects＇ energy levels are quantitatively determined. The comer frequency of RTS noise power spectral density is analyzed. The experimental results are in good agreement with the theoretical. This result provided an effective method for estimating the deep-level traps in the active region of A1GaInP multiple quantum well laser diode.     

高Z类钴Te25+离子3p63d9-3p53d10,3p63d9-3p63d84p跃迁及振子强度的计算

用多组态自洽场方法,结合我们提出的半经验拟合公式,计算了高Z类钴Te25+离子3p63d9-3p53d10,3p63d9-3p63d84p跃迁和振子强度,与实验符合得较好。