国防建设需要再入遥测更快发展

<正> 1 概述 再入遥测技术主要是指对飞行器(如导弹弹头)在再入大气层过程中的各种物理参数进行遥测的一项专门技术。它的基本原理与通常的遥测技术相同,相对而言,某些方面比一般遥测还困难得多。再入遥测是一个独立、强大的国家必须掌握的一门技术。 再入遥测技术具有一系列明显的特点,归纳起来主要有: (1)特快信号测量 特快信号泛指那些在很短瞬间突然产物的物理     

Current mechanism and band alignment of Al(Pt)/HfGdO/Ge capacitors

HfGdO high-k gate dielectric thin films were deposited on Ge substrates by radio-frequency magnetron sputtering. The current transport properties of Al(Pt)/HfGdO/Ge MOS structures were investigated at room temperature. The results show that the leakage currents are mainly induced by Frenkel-Poole emissions at a low electric field. At a high electric field, Fowler Nordheim tunneling dominates the current. The energy barriers were obtained by analyzing the Fowler Nordheim tunneling characteristics, which are 1.62 eV and 2.77 eV for Al/HfGdO and Pt/HfGdO, respectively. The energy band alignments for metal/HfGdO/Ge capacitors are summarized together with the results of current-voltage and the x-ray photoelectron spectroscopy.     

超级电容器电极材料VS4@PPy的制备及其电化学性能

探索具有优异电化学性能的电极材料是推进超级电容器发展的关键,设计优化过渡金属硫化物并研究其电化学性能对超级电容器的发展和应用至关重要.具有多种不同形貌的VS4正是研究重点之一.采用简单的一步水热法制备了花状VS4纳米材料,通过原位氧化聚合法在VS4上包覆聚吡咯(PPy),得到VS4@PPy纳米复合材料.PPy出色的导电...     

Er_2O_3薄膜型热辐射体的制备与性能研究

调制辐射体的可见和近红外区域的辐射光谱与光伏电池吸收光谱的匹配是开发高性能热光伏电池技术的关键.采用电子束蒸发在单晶硅衬底上制备金属Er薄膜并进行后氧化处理制备Er_2O_3薄膜型辐射体.X射线衍射结果表明薄膜结晶良好,且Si基底对Er_2O_3薄膜的晶体结构没有显著影响.X射线光电子能谱拟合结果表明薄膜中Er元素和O元素符合Er_2O_3的化学计量比.高温近红外光谱测试结果表明,样品在1550 nm左右出现了明显的Er~(3+)离子的特征辐射峰,这与GaSb光电池的吸收光谱相匹配.     

Band Alignment and Band Gap Characterization of La2O3 Films on Si Substrates Grown by Radio Frequency Magnetron Sputtering

La2O3 films are grown on Si （100） substrates by the radio-frequency magnetron sputtering technique. The band alignment of the La203/Si heterojunction is analyzed by the x-ray photoelectron spectroscopy. The valence- band and the conduction-band offsets of La2 Oa films to Si substrates are found to be 2.40±0.1 and 1.66±0.3 eV, respectively. Based on 0 ls energy loss spectrum analysis, it can be noted that the energy gap of La203 films is 5.18±0.2eV, which is confirmed by the ultra-violet visible spectrum. According to the suitable band offset and large band gap, it can be concluded that La2O3 could be a promising candidate to act as high-k gate dielectrics.     

TMS320C6713 DSP与数字上变频器AD9857接口设计

讨论了TI公司的数字信号处理器TMS320C6713的多通道缓冲串行端口与数字上变频器AD9857的接口设计,详细阐述了两者的硬件接口和集成开发环境CCS下的软件实现。