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采用水热法将TiO2纳米片修饰在中空管状g-C3N4上制备了TiO2/g-C3N4(T-CN)复合催化剂。利用扫描电子显微镜(SEM)、X射线光电子能谱(XPS)、紫外可见漫反射光谱(UV-Vis DRS)和光电流响应等对其形貌、结构和光物理性能进行了表征。结果表明,TiO2纳米片均匀地分散在中空管状g-C3N4表面,两者紧密结合形成异质结。TiO2与g-C3N4的质量比为20%时制得的T-CN-20复合催化剂在60 min内对U (Ⅵ)的去除率为85.64%,是纯相g-C3N4的6.7倍。在10倍高浓度阳离子共存条件下的去除率仍大于69.8%,且具有优良的结构稳定性。对光催化产物分析可知,T-CN将U (Ⅵ)还原为难溶的U (Ⅳ)(63.68%)以去除铀,可有效解决含铀核废水中的U (Ⅵ)污染问题。根据能带理论分析,提出了复合催化剂异质结的Ⅱ型光催化机理。 相似文献
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Thickness dependence of the anomalous Hall effect in disordered face-centered cubic FePt alloy filmsThickness dependence of the anomalous Hall effect in disordered face-centered cubic FePt alloy filmsThickness dependence of the anomalous Hall effect in disordered face-centered cubic FePt alloy films
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The anomalous Hall effect in disordered face-centered cubic (fcc) FePt alloy films is experimentally studied. The longitudinal resistivity independent term of the anomalous Hall conductivity (AHC) increases and approaches saturation with increasing film thickness. The contribution of side jump scattering is suggested to decrease monotonically with increasing film thickness, which can be ascribed to the variation of the surface scattering with the film thickness. The sign of the skew scattering contribution to the AHC is opposite to that of the intrinsic contribution in the system. 相似文献
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Thickness dependence of the anomalous Hall effect in disordered face-centered cubic FePt alloy films
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The anomalous Hall effect in disordered face-centered cubic(fcc) FePt alloy films is experimentally studied. The longitudinal resistivity independent term of the anomalous Hall conductivity(AHC) increases and approaches saturation with increasing film thickness. The contribution of side jump scattering is suggested to decrease monotonically with increasing film thickness, which can be ascribed to the variation of the surface scattering with the film thickness. The sign of the skew scattering contribution to the AHC is opposite to that of the intrinsic contribution in the system. 相似文献