High-voltage super-junction lateral double-diffused metal-oxide semiconductor with a partial lightly doped pillar

A novel super-junction lateral double-diffused metal-oxide semiconductor(SJ-LDMOS) with a partial lightly doped P pillar(PD) is proposed.Firstly,the reduction in the partial P pillar charges ensures the charge balance and suppresses the substrate-assisted depletion effect.Secondly,the new electric field peak produced by the P/P-junction modulates the surface electric field distribution.Both of these result in a high breakdown voltage(BV).In addition,due to the same conduction paths,the specific on-resistance(R on,sp) of the PD SJ-LDMOS is approximately identical to the conventional SJ-LDMOS.Simulation results indicate that the average value of the surface lateral electric field of the PD SJ-LDMOS reaches 20V/μm at a 15μm drift length,resulting in a BV of 300V.     

4G移动通信技术与安全缺陷分析

随着科学技术的日益发展和智能手机的普及,4G移动通信技术也越来越受到社会大众的广泛关注,移动通信技术从3G到4G的转换也成为大众当下讨论的热点。文章通过对4G移动通信技术的概念、通信系统以及核心技术的介绍,对4G移动通信技术的安全方面进行剖析,并提出对其安全缺陷方面相应的解决对策,为4G移动通信技术在未来安全问题的发展方向上提供帮助。     

压电式射流激励器工作特性的实验研究

实验设计了压电式合成射流激励器及压电振子振幅测量系统和合成射流速度测量系统.此射流激励器为换能装置,产生的合成射流速度与电参数如驱动频率、信号波形、驱动电压等因素有关.只有驱动频率在一定范围内时才会产生射流速度,且存在着最佳的驱动频率;方波与正弦波、三角波相比可产生更大的射流速度;合适的射流口尺寸也可提高射流速度.     

NAS的逆袭

当IT网络系统发展到一定规模后,计算机设备上的单一磁盘就很难适应数据存储的需求,出现了容量的限制、速度的限制、访问带宽的限制。于是,存储控制器应运而生,它采用了独立处理芯片来处理、协调多块磁盘之间的访问和数据读写组合;更进一步地,将计算机技术和存储控制器进一步整合,就有了存储阵列     

Low on-resistance high-voltage lateral double-diffused metal oxide semiconductor with a buried improved super-junction layer

A novel low specific on-resistance （Ron,sp） lateral double-diffused metal oxide semiconductor （LDMOS） with a buried improved super-junction （BISJ） layer is proposed. A super-junction layer is buried in the drift region and the P pillar is split into two parts with different doping concentrations. Firstly, the buried super-junction layer causes the multiple-direction assisted depletion effect. The drift region doping concentration of the BISJ LDMOS is therefore much higher than that of the conventional LDMOS. Secondly, the buried super-junction layer provides a bulk low on-resistance path. Both of them reduce Ron,sp greatly. Thirdly, the electric field modulation effect of the new electric field peak introduced by the step doped P pillar improves the breakdown voltage （BV）. The BISJ LDMOS exhibits a BV of 300 V and Ron,sp of 8.08 mΩ·cm2 which increases BV by 35% and reduces Ron,sp by 60% compared with those of a conventional LDMOS with a drift length of 15 μm, respectively.     

基于本体的语义Web服务注册平台研究

提出了一种基于本体的语义Web服务注册模型,结合Jena实现语义Web服务的语义查询和推理.应用元模型互操作框架(MFI)中的本体注册元模型标准,以实现与其他注册模型的语义互操作,并给出了一个基于该模型的语义Web服务注册平台.     

具有缓冲层和N型埋层的高压兼容Bi-CMOS工艺的超结LDMOS

A novel buffer super-junction （S J） lateral double-diffused MOSFET （LDMOS） with an N-type buried layer （NB） is proposed. An N- buffer layer is implemented under the SJ region and an N-type layer is buried in the P substrate. Firstly, the new electric field peak introduced by the p-n junction of the P substrate and the N-type buried layer modulates the surface electric field distribution. Secondly, the N-buffer layer suppresses the substrate assisted depletion effect. Both of them improve the breakdown voltage （BV）. Finally, because of the shallow depth of the SJ region, the NB buffer SJ-LDMOS is compatible with Bi-CMOS technology. Simulation results indicate that the average value of the surface lateral electric field strength of the NB buffer SJ-LDMOS reaches 23 V/μm at 15/μm drift length which results in a BV of 350 V and a specific on-resistance of 21 mΩ·cm2.