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1.
Effects of barium on the nonlinear electrical characteristics and dielectric properties of SnO2-based varistors 下载免费PDF全文
The effects of barium on electrical and dielectric properties of the SnO_2·Co_2O_3·Ta_2O_5 varistor system sintered at 1250℃ for 60min were investigated. It is found that barium significantly improves the nonlinear properties. The breakdown electrical field increases from 378.0 to 2834.5V/mm, relative dielectric constant (at 1kHz) falls from 1206 to 161 and the resistivity (at 1kHz) rises from 60.3 to 1146.5kΩ·cm with an increase of BaCO_3 concentration from 0mol% to 1.00mol%. The sample with 1.00mol% barium has the best nonlinear electrical property and the highest nonlinear coefficient (α=29.2). A modified defect barrier model is introduced to illustrate the grain-boundary barrier formation of barium-doped SnO_{2}-based varistors. 相似文献
2.
MgSiO3掺杂对ZnO压敏电阻器电学性质的影响 总被引:1,自引:0,他引:1
采用传统陶瓷工艺制备了MgSiO3掺杂的防雷用ZnO压敏电阻。实验发现,掺杂0.04%的MgSiO3(物质的量)能显著提高其电流–电压非线性、通流能力和电压梯度E1.0,且能降低样品的漏电流IL以及残压比V40kA/V1mA。其非线性系数α和压敏电压梯度分别高达120,180V/mm,样品正反面各五次通流40kA、8/20μs波后,残压比和压敏电压变化率?V1mA/V1mA分别仅为2.56和–2.9%,且漏电流变化很小。对样品的微观结构分析显示,其电学性能的提高和晶粒的均匀程度有关。 相似文献
3.
研究了Cd对(Co,Nb)掺杂SnO2压敏材料电学性质的影响。组分为97.65%SnO2 O.75%Co2O3 0.10%Nb2O5 1.50%CdO的压敏电阻具有最大非线性系数(a=22.2)和最高的势垒(ψB=0.761eV).当CdO的摩尔分数从0增加到3%时,(Co,Nb)掺杂SnO2压敏电阻的击穿电压从366V/mm增大到556V/mm,1kHz时的相对介电常数从1429减小到1108。晶界势垒高度测量揭示,SnO2的晶粒尺寸的减小是击穿电压增高和介电常数减小的主要原因。对Cd掺杂量增加引起SnO2晶粒减小的根源进行了解释。 相似文献
4.
Phase Transition and High Piezoactivity of Sb Doped (Na0.53K0.435Li0.035)Nb0.94Ta0.06 O3 Lead-Free Ceramics 下载免费PDF全文
Lead-free piezoelectric ceramics with the composition of (Na0.53K0.435Li0.035)Nb0.94Ta0.06 O3 (NKLNST) axe synthesized by a conventional solid-state sintering process. An MPB-like region between orthorhombic and pseudocubic phases is found in this system. The density, piezoelectric and dielectric properties axe enhanced greatly in this region. A composition (Na0.53K0.435Li0.035)(Nb0.94Ta0.06)O3 is found to have excellent electrical properties: d33 = 320pC/N, kp= 49% and kt =43%, as well as relatively low loss, tan δ=4.2%, and high relative density higher than 96%, which indicate that this ceramics is a promising lead-free piezoceramics replacing for lead zirconate titanate. 相似文献
5.
高性能铌酸钾钠无铅压电陶瓷研制 总被引:3,自引:2,他引:1
用常规氧化物固溶方法制备了无铅压电铌酸盐((Na0.5K0.5)1-xLixSbyNb1-yO3)陶瓷。实验结果表明,Li+和Sb5+的引入提高了陶瓷的压电性能。在一定配比范围内(Li和Sb在10%摩尔分数以内),材料为斜方、四方相共存的钙钛矿结构,材料的压电常数d33在270 pC/N以上,机电耦合系数kp、kt、k33分别达到49×10–2、43×10–2、64×10–2。介质损耗tgδ小于2.0×10_2,居里温度tC高达375℃。 相似文献
6.
(Na0.52K0.44Li0.04)Nb0.9-xSbxTa0.1O3 Lead-Free Piezoelectric Ceramics with High Performance and High Curie Temperature 下载免费PDF全文
(Na0.52K0.44Li0.04)Nb0.9-x Sbx Ta0.1O3 lead-free piezoelectric ceramics are prepared by a solid-state reaction method. With increasing Sb content, the transition temperature from orthorhombic to tetragonal polymorphic phase decreased. A composition (Na0.52K0.44Li0.04)Nb0.863Sb0.037Ta0.1O3 is found to possess excellent piezo- electric and electromechanical performances (d33 = 306pC/N, kp =48%, and kt=50%), and high Curie temperature (Tc = 320 ℃). These results indicate that (Na0.52K0.44Li0.04)Nb0.863Sb0.037 Ta0.1O3 is a promising lead-free piezoceramics replacement for lead zirconate titanate. 相似文献
7.
Phase Transition and High Piezoactivity of Sr Doped Lead-Free (Na0.53K0.422Li0.048) (Nb0.89Sb0.06Wa0.05)O3 Ceramics 下载免费PDF全文
Lead-free piezoelectric ceramics (Na0.53K0.422Li0.048 ) (Nb0.89Sb0.06 Ta0.05 )03 (NKLNST) + x tool SrCO3 are prepared by conventional solid state sintering method. The specimens with pure perovskite structure show tetragonal phase at x 〈 0.01, and become pseudo-cubic phase at x 〉 0.02. A lattice parameter discontinuity is found in the specimens with 0.004 〈 x 〈 0.0075, along with a great improvement in piezoactivity. The 0.004 mol SrCO3 added NKLNST ceramics possesses outstanding performances of kp = 0.53, kt = 0.26, and d33=309 pC/N. Moreover, the Sr^2+ modification inhibits the gra/n growth, decreases the Curie temperature, and induces a diffuse phase transition. 相似文献
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9.
研究了Sr对新型(Co, Nb)掺杂SnO2压敏材料微观结构和电学性质的影响.当SrCO 3的含量从零增加到1.50mol%时,(Co, Nb)掺杂SnO2压敏电阻的击穿电压从240V/mm猛增 到1482V/mm.样品的微观结构分析发现, 当SrCO3的含量从零增加到1.50 mol%时, SnO2的晶粒尺寸迅速减小.晶界势垒高度测量揭示,SnO2晶粒尺寸的迅速减小是击穿
关键词:
碳酸锶
二氧化锡
势垒
电学非线性 相似文献
10.
(Ba,Co,Nb)掺杂SnO2压敏材料电学非线性的研究 总被引:2,自引:0,他引:2
通过对样品的伏安特性,晶界势垒的测量和分析,研究了BaCO3对新型(Co,Nb)掺杂SnO2压敏材料微观结构和电学性质的影响。晶界势垒高度测量表明,SnO2晶粒尺寸的迅速减小是压敏电压急剧增高的原因。对Ba含量增加引起SnO2晶粒减小的根源进行了解释。掺杂x(BaCO3)=0.4%的SnO2压敏电阻击穿电压为最小(140V/mm);掺杂x(BaCO3)-0.8%的SnO2压敏电阻具有最高非线性系数(α=19.6),最高的势垒电压(ψB=1.28eV)。 相似文献