g-factor anisotropy for donor-bound electrons at all magnetic fields

Summary A theory of theg-factor for electrons bound to donors in zincblende semiconductors is presented for all magnetic fields. Simple analytical expressions are obtained for weak, intermediate and high magnetic-field intensities. A comparison between theory and the experimental result in the case of InSb is made.     

Analysis of silicon light emission under breakdown condition using an indirect intraband model

The light emission from silicon (npn) emitter–base junctions under breakdown condition has been modelled. The model suggests an indirect intraband processes combined with self-absorption. Good agreement between simulated and measured electroluminescence (EL) spectra is shown which demonstrates that the model is simple and more consistent with fundamental physical device characteristics particularly in the spectral range studied (1.4–2 eV).     

Exciton Stability and Luminescence in InN/(In,Ga)N Quantum Dots Under Size and Shell Content Effects

International Journal of Theoretical Physics - The electronic structure and associated excitonic properties of core/shell nanocrystals based on InN/(In,Ga)N quantum dots with InN-core and...     

Synthesis, characterization, and growth mechanism of α-Cr2O3 monodispersed particles

Monodispersed spherical particles of chromium (III) oxide, α-Cr₂O₃, were successfully synthesized from a diluted solution of KCr(SO₄)₂·12H₂O using the Aqueous Chemical Growth (ACG) technique. The spherical α-Cr₂O₃ particles obtained were characterized by X-ray diffraction (XRD), Scanning Electron Microscopy (SEM), and Raman spectroscopy for structural, surface morphological, chemical, and physical properties, as a function of deposition time. The XRD and Raman spectroscopy showed that aging had no apparent effect on the structure of the obtained uniform fine (in the range of micron-nano-level)-spherical particles of α-Cr₂O₃. The use of SEM demonstrated that aging had a clear influence on the size and the particles size distribution. Accordingly, the time dependence of the average diameter of α-Cr₂O₃ spherical particles follows the d³ law as required for diffusion-limited Ostwald ripening.     

Analysis of temperature and 1 MeV proton irradiation effects on the light emission in bulk silicon (npn) emitter-base bipolar junctions

In this work, we present the temperature and 1 MeV irradiation proton effects on the light emission in bulk silicon emitter-base junctions for direct and reverse polarizations. Our samples were exposed at room temperature to 5.3 × 10⁸, 5.3 × 10¹⁰, 5 × 10¹¹, 5 × 10¹² and 5 × 10¹³ p cm⁻². The spectral range for which electroluminescence spectrums were recorded for forward and reverse polarizations is 0.6–2 eV. For forward bias, EL maximum intensity occurs at 1.0923 ± 0.0001 eV (structure (a)) which decreases as function of irradiation fluencies. For reverse bias, the spectra contain two structures (b) and (c). The first structure (c) occurred at 1.6243 ± 0.0013 eV is independent of irradiation while the second structure (b) decreases as function of fluencies irradiation. The Gaussian deconvolution of (b) shows two sub-structures (b₁) and (b₂) which are located, respectively, at 0.8064 ± 0.0004 eV and 0.9917 ± 0.0016 eV. We studied temperature dependence of full width at half-maximum (FWHM) and we found that the phonons involved in (a), (b₁) and (b₂) on the one hand and (c) on the other hand are not the same. Moreover, we obtained from the study of EL intensity temperature dependence that the activation energies of (a), (b₁) and (b₂) are identical and differ from that of (c). These effects enable us to conclude that visible light emission does not have the same origin as that in infra-red. From these observations, we can attribute the structures (a) and (b) to indirect inter-bands transitions and (c) to a direct intra-band transitions.     

Optical properties of a magneto-donor in a quantum dot

The temperature-dependent magnetoresistance effect is investigated in a magnetically modulated two-dimensional (2D) electron gas (2DEG) which can be realized by depositing two parallel ferromagnets on top of a 2DEG electron gas. In the resonant tunnelling regime the transmission for the parallel and antiparallel magnetization configurations shows a quite distinct dependence on the longitudinal wave vector of the incident electrons. This leads to a very large magneto resistance ratio with a strong temperature dependence.     

Optical characterization of InGaN/AlGaN/GaN diode grown on silicon carbide

Electroluminescence (EL) properties of In_xGa_1−xN/Al_yGa_1−yN/GaN/SiC diode were studied. The spectral range for which EL spectra were recorded is 1–3.5 eV. Room temperature EL was obtained for forward bias (3.18 V, 220 μA) at 446.067 nm (blue luminescence band), 606.98 nm (yellow luminescence band) and 893.84 nm (Infrared luminescence band). The EL temperature dependence shows that, BL band is mostly given by e–h recombination corresponding to indium composition equal to 0.17 ± 0.01 and 0.14 ± 0.02 obtained theoretically and experimentally, respectively. The yellow band is generally weak and absent at low temperature. The IRL band is more consistent with the DAP recombination and could be explained by the thermal activation of Mg states. The luminescence bands shift to lower energies is due probably to the larger potential fluctuations effect.